Growth mechanism of atomic-layer-deposited TiAlC metal gatebased on TiCl4 and TMA precursors

doi:10.1088/1674-1056/25/3/037308

Abstract TiAlC metal gate for the metal-oxide-semiconductor field-effect-transistor (MOSFET) is grown by the atomic layer deposition method using TiCl₄ and Al(CH₃)₃(TMA) as precursors. It is found that the major product of the TiCl₄ and TMA reaction is TiAlC, and the components of C and Al are found to increase with higher growth temperature. The reaction mechanism is investigated by using x-ray photoemission spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscope (SEM). The reaction mechanism is as follows. Ti is generated through the reduction of TiCl₄ by TMA. The reductive behavior of TMA involves the formation of ethane. The Ti from the reduction of TiCl₄ by TMA reacts with ethane easily forming heterogenetic TiCH₂, TiCH=CH₂ and TiC fragments. In addition, TMA thermally decomposes, driving Al into the TiC film and leading to TiAlC formation. With the growth temperature increasing, TMA decomposes more severely, resulting in more C and Al in the TiAlC film. Thus, the film composition can be controlled by the growth temperature to a certain extent.

Keywords: atomic layer deposition metal gate TiAlC reaction mechanism

Received: 04 November 2015
Revised: 14 November 2015
Accepted manuscript online:

PACS:

73.40.Qv

(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the Key Technology Study for 16/14 nm Program of the Ministry of Science and Technology of China (Grant No. 2013ZX02303).

Corresponding Authors: Chao Zhao
E-mail: zhaochao@ime.ac.cn

Cite this article:

Jinjuan Xiang(项金娟), Yuqiang Ding(丁玉强), Liyong Du(杜立永), Junfeng Li(李俊峰),Wenwu Wang(王文武), Chao Zhao(赵超) Growth mechanism of atomic-layer-deposited TiAlC metal gatebased on TiCl₄ and TMA precursors 2016 Chin. Phys. B 25 037308

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Growth mechanism of atomic-layer-deposited TiAlC metal gatebased on TiCl4 and TMA precursors

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Growth mechanism of atomic-layer-deposited TiAlC metal gatebased on TiCl₄ and TMA precursors