Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

doi:10.1088/1674-1056/25/2/028501

Abstract The AlGaN-based deep ultraviolet light-emitting diodes (LED) with double electron blocking layers (d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency (IQE). The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells (QWs) enhances the electron-hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.

Keywords: double electron blocking layers ultraviolet light-emitting diodes n-AlGaN electrostatic field

Received: 17 June 2015
Revised: 09 October 2015
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	78.60.Fi	(Electroluminescence)
	87.15.A-	(Theory, modeling, and computer simulation)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the Special Strategic Emerging Industries of Guangdong Province, China (Grant No. 2012A080304006), the Major Scientific and Technological Projects of Zhongshan City, Guangdong Province, China (Grant No. 2014A2FC204), and the Forefront of Technology Innovation and Key Technology Projects of Guangdong Province, China (Grant Nos. 2014B010121001 and 2014B010119004).

Corresponding Authors: Hui-Qing Sun
E-mail: sunhq@scnu.edu.cn

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Cheng Zhang(张诚), Hui-Qing Sun(孙慧卿), Xu-Na Li(李旭娜), Hao Sun(孙浩), Xuan-Cong Fan(范宣聪), Zhu-Ding Zhang(张柱定), Zhi-You Guo(郭志友) Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers 2016 Chin. Phys. B 25 028501

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Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

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