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Semi-analytical model for quasi-double-layer surface electrode ion traps |
| Jian Zhang(张见)1, Shuming Chen(陈书明)1,2, Yaohua Wang(王耀华)1 |
1 College of Computer, National University of Defense Technology, Changsha 410073, China;
2 State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, China |
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Abstract To realize scale quantum processors, the surface-electrode ion trap is an effective scaling approach, including single-layer, double-layer, and quasi-double-layer traps. To calculate critical trap parameters such as the trap center and trap depth, the finite element method (FEM) simulation was widely used, however, it is always time consuming. Moreover, the FEM simulation is also incapable of exhibiting the direct relationship between the geometry dimension and these parameters. To eliminate the problems above, House and Madsen et al. have respectively provided analytic models for single-layer traps and double-layer traps. In this paper, we propose a semi-analytical model for quasi-double-layer traps. This model can be applied to calculate the important parameters above of the ion trap in the trap design process. With this model, we can quickly and precisely find the optimum geometry design for trap electrodes in various cases.
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Received: 30 May 2016
Revised: 19 July 2016
Accepted manuscript online:
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PACS:
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37.10.Gh
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(Atom traps and guides)
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37.10.Ty
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(Ion trapping)
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Corresponding Authors:
Shuming Chen, Yaohua Wang
E-mail: smchen@nudt.edu.cn;nudtyh@gmail.com
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Cite this article:
Jian Zhang(张见), Shuming Chen(陈书明), Yaohua Wang(王耀华) Semi-analytical model for quasi-double-layer surface electrode ion traps 2016 Chin. Phys. B 25 113701
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