Recovery of PMOSFET NBTI under different conditions

doi:10.1088/1674-1056/24/9/097304

Abstract Negative bias temperature instability (NBTI) has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal-oxide-semiconductor field effect transistor (PMOSFET), explain the various recovery phenomena, and find the possible processes of the recovery.

Keywords: negative bias temperature instability (NBTI) P-type metal-oxide-semiconductor field effect transistor recovery

Received: 09 July 2014
Revised: 01 April 2015
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant Nos. 61404097, 61334002, 61106106, and 61176130), and the Fundamental Research Funds for the Central Universities, China (Grant No. JB140415).

Corresponding Authors: Cao Yan-Rong
E-mail: yrcao@mail.xidian.edu.cn

Cite this article:

Cao Yan-Rong (曹艳荣), Yang Yi (杨毅), Cao Cheng (曹成), He Wen-Long (何文龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Recovery of PMOSFET NBTI under different conditions 2015 Chin. Phys. B 24 097304

[1]	Lu D, Ruggles G A and Wortman J J 1988 Appl. Phys. Lett. 52 1344
[2]	Blat C E, Niconlian E H and Poindexter E H 1991 J. Appl. Phys. 69 1712
[3]	Maeda S, Maegawa S and Ipposhi T 1994 J. Appl. Phys. 76 8160
[4]	Huard V, Denais M and Parthasarathy C 2006 Microelectronics Reliability 46 123
[5]	Kushida-Abdelghafar K and Watanabe K 2002 Apply. Phys. Lett. 81 4362
[6]	Tsetseris L, Zhou X J, Fleetwood D M, Schrimpf R D and Pantelides S T 2005 Appl. Phys. Lett. 86 142103
[7]	Chen C Y, Lee J W and Wang S D 2006 IEEE Electron Devices 53 29933000
[8]	Devine R A B, Alshareef H N and Quevedo-Lopez M A 2008 J. Appl. Phys. 104 124109
[9]	Ershov M, Saxena S, Karbasi H, Winters S and Minehane S 2003 Appl. Phys. Lett. 83 1647
[10]	Chen G, Li M F, Ang C H, Zheng J Z 2002 IEEE Electron Dev. Lett. 23 734736
[11]	Yonamoto Y and Akamatsu N 2011 Appl. Phys. Lett. 98 103513
[12]	Huang S Y, Chang T C, Yang M C and Lin L W 2012 Appl. Phys. Lett. 101 253502
[13]	Nguyen D D, Kouhestani C, Kambour K E and Devin R A B 2014 J. Vac. Sci. Technol. B 32 011205
[14]	Krishnan A T, Chakravarthi S, Nicollian P, Reddy V and Krishnan S 2006 Appl. Phys. Lett. 88 153518
[15]	Cao Y R, Ma X H, Hao Y, Yu L, Zhu Z W and Chen H F 2007 Chin. Phys. 16 1140
[16]	Cao Y R, Ma X H, Hao Y and Tian W C 2010 Chin. Phys. B 19 097306
[17]	Alam M A and Mahapatra S 2005 Micoroelectronics Reliability 45 7181

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Recovery of PMOSFET NBTI under different conditions

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