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Chin. Phys. B, 2015, Vol. 24(8): 087305    DOI: 10.1088/1674-1056/24/8/087305

Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

Huang Jiea, Li Mingb, Zhao Qianc, Gu Wen-Wena, Lau Kei-Mayb
a College of Engineering and Technology, Southwest University, Chongqing 400715, China;
b Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China;
c School of Physical Science and Technology, Southwest University, Chongqing 400715, China
Abstract  In this work, a hetero-epitaxial Al0.49In0.51As/Ga0.47In0.53As metamorphic high electron mobility transistor (mHEMT) grown by metal–organic chemical vapor deposition (MOCVD) on p-type silicon substrate has been successfully demonstrated. A novel AlGaAs/AlAs period multiple quantum well (MQW) composite buffer scheme is developed to effectively tune the leakage current from the buffer layer. The quantized room-temperature Hall mobility of the two-dimensional electron gas (2DEG) is larger than 7800 cm2/V·s, with an average sheet carrier density of 4.6×1012 cm-2. Two-stage electron beam (EB) lithography technology by a JBX-6300 e-beam lithography system is developed to realize a 0.13-μm mHEMT device on Si substrate. A maximum transconductance Gm of up to 854 mS/mm is achieved, and is comparable to that of mHEMT technology on GaAs substrate with the same dimension. The fT and fmax are 135 GHz and 120 GHz, respectively.
Keywords:  AlInAs/GaInAs      silicon      metamorphic high electron mobility transistor (mHEMT)      metal-organic chemical vapor deposition (MOCVD)      multiple quantum well (MQW)     
Received:  29 December 2014      Published:  05 August 2015
PACS:  73.61.Ey (III-V semiconductors)  
Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61401373), the Fundamental Research Funds for Central University, China (Grant Nos. XDJK2013B004 and 2362014XK13), and the Chongqing Natural Science Foundation, China (Grant No. cstc2014jcyjA40038).
Corresponding Authors:  Huang Jie, Li Ming     E-mail:;

Cite this article: 

Huang Jie, Li Ming, Zhao Qian, Gu Wen-Wen, Lau Kei-May Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications 2015 Chin. Phys. B 24 087305

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