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Chin. Phys. B, 2015, Vol. 24(2): 027504    DOI: 10.1088/1674-1056/24/2/027504

Effects of growing conditions on the electric and magnetic properties of strained La2/3Sr1/3MnO3 thin films

Lu Hai-Xia, Wang Jing, Shen Bao-Gen, Sun Ji-Rong
Beijing National Laboratory for Condensed Matter Physics and the Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  We investigate the growing condition dependences of magnetic and electric properties of the La2/3Sr1/3MnO3 thin films grown on SrTiO3 (001) substrates. With reducing the film thickness and growth pressure, the Curie temperature (TC) drops off, and the magnetism and metallicity are suppressed. At an appropriate deposition temperature, we can obtain the best texture and remarkably enhance the magnetic and electrical properties. However, the resistivity of film cannot be modulated by changing the dc current and green light intensity. This result may be induced by the coherent strains in the epitaxially grown film due to its lattice mismatching that of the SrTiO3 substrate. Furthermore, we show that the relations between the magnetism and the resistivity for the typical films with different thickness values. For the 13.4-nm-thick film, the R-T curve presents two transition behaviors: insulator-to-metal and metal-to-insulator in the cooling process: the former corresponds to magnetic transition, and the later correlates with thermal excitation conduction.
Keywords:  growing condition      magnetism      resistivity  
Received:  19 August 2014      Revised:  14 October 2014      Published:  05 February 2015
PACS:  75.70.Ak (Magnetic properties of monolayers and thin films)  
  68.55.A- (Nucleation and growth)  
  75.47.Lx (Magnetic oxides)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 111374348, 11134007, 11174345, and 111474341) and the National Basic Reaearch Program of China (Grant Nos. 2013CB921700, 2011CB921801, and 2012CB933000).
Corresponding Authors:  Sun Ji-Rong     E-mail:

Cite this article: 

Lu Hai-Xia, Wang Jing, Shen Bao-Gen, Sun Ji-Rong Effects of growing conditions on the electric and magnetic properties of strained La2/3Sr1/3MnO3 thin films 2015 Chin. Phys. B 24 027504

[1] Coey J D, Viret M and Von Molnár S 1999 Ads. Phys. 48 167
[2] Urushibara A, Moritomo Y, Arima T, Asamitsu A, Kido G and Tokura Y 1996 Phys. Rev. B 51 14103
[3] Marie-Bernadette L, Bernard M and Charles S 2012 Phys. Rev. Lett. 108 087202
[4] Tsuia F, Smoak M C, Nath T K and Eom C B 2000 Appl. Phys. Lett. 76 2421
[5] Ziese M, Semmelhack H C and Han K H 2003 Phys. Rev. B 68 134444
[6] Huijben M, Martin L W, Chu Y H, Holcomb M B, Yu P, Rijnders G, Blank D H A and Ramesh R 2008 Phys. Rev. B 78 094423
[7] Fang Z, Solovyev I V and Terakura K 2000 Phys. Rev. Lett. 84 3169
[8] Sun J Z, Abraham D W, Rao R A and Eom C B 1999 Appl. Phys. Lett. 74 3017
[9] Bibes M, Valencia S, Balcells L, Martínez B, Fontcuberta J, Wojcik M, Nadolski S and Jedryka E 2002 Phys. Rev. B 66 134416
[10] Borges R P, Guichard W, Lunney J G, Coey J M D and Ott F 2001 J. Appl. Phys. 89 3868
[11] Angeloni M, Balestrino G, Boggio N, Medaglia P G, Orgiani P and Tebano A 2004 J. Appl. Phys. 96 6387
[12] Ziese M, Semmelhack H C, Han K H, Sena S P and Blythe H J 2002 J. Appl. Phys. 91 3868
[13] Sun Y H, Zhao Y G, Zhu M H, Xie B T and Wu W B 2012 J. Appl. Phys. 112 023908
[14] Sun Y H, Zhao Y G, Tian H F, Xiong C M, Xie B T and Zhu M H 2008 Phys. Rev. B 78 024412
[15] Sun J R, Liu G J, Zhang S Y, Han X F and Shen B G 2005 Appl. Phys. Lett. 86 242507
[16] Xie Y W, Sun J R, Wang D J, Liang S, Lu W M and Shen B G 2006 Appl. Phys. Lett. 89 172507
[17] Zener C 1951 Phys. Rev. B 82 403
[18] Kim B, Kwon D, Yajima T, Bell C H, Hikita Y, Kim B G and Hwang H Y 2011 Appl. Phys. Lett. 99 092513
[19] Xue Z Q, Huang S R, Zhang B P and Chen C 2010 Acta Phys. Sin. 59 5002 (in Chinese)
[20] Zhao N, Huang M L, Ma H T, Pan X M and Liu X Y 2013 Acta Phys. Sin. 62 086601 (in Chinese)
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