Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation

doi:10.1088/1674-1056/24/11/119401

Abstract FinFET technologies are becoming the mainstream process as technology scales down. Based on a 28-nm bulk p-FinFET device, we have investigated the fin width and height dependence of bipolar amplification for heavy-ion-irradiated FinFETs by 3D TCAD numerical simulation. Simulation results show that due to a well bipolar conduction mechanism rather than a channel (fin) conduction path, the transistors with narrower fins exhibit a diminished bipolar amplification effect, while the fin height presents a trivial effect on the bipolar amplification and charge collection. The results also indicate that the single event transient (SET) pulse width can be mitigated about 35% at least by optimizing the ratio of fin width and height, which can provide guidance for radiation-hardened applications in bulk FinFET technology.

Keywords: fin width and height bipolar amplification single event transient bulk FinFET

Received: 09 March 2015
Revised: 23 June 2015
Accepted manuscript online:

PACS:	94.05.Dd	(Radiation processes)
	85.30.Tv	(Field effect devices)
	02.60.Cb	(Numerical simulation; solution of equations)

Fund: Project supported by the National Natural Science of China (Grant No. 61376109).

Corresponding Authors: Yu Jun-Ting
E-mail: yjting_nudt@163.com

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Yu Jun-Ting (于俊庭), Chen Shu-Ming (陈书明), Chen Jian-Jun (陈建军), Huang Peng-Cheng (黄鹏程) Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation 2015 Chin. Phys. B 24 119401

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Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation

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