Please wait a minute...
Chin. Phys. B, 2015, Vol. 24(1): 018102    DOI: 10.1088/1674-1056/24/1/018102

High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition

Wang Lian-Kai, Liu Ren-Jun, Lü You, Yang Hao-Yu, Li Guo-Xing, Zhang Yuan-Tao, Zhang Bao-Lin
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Changchun 130012, China

Orthogonal experiments of GaSb films growth on GaAs(001) substrates have been designed and performed by using a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized GaSb thin film has a narrow full width at half maximum (358 arc sec) of the (004) ω-rocking curve, and a smooth surface with a low root-mean-square roughness of about 6 nm, which is typical in the case of the heteroepitaxial single-crystal films. In addition, we studied the effects of layer thickness of GaSb thin film on the density of dislocations by Raman spectra. It is believed that our research can provide valuable information for the fabrication of high-crystalline GaSb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices.

Keywords:  crystal growth      metal-organic chemical vapor deposition      thin films  
Received:  11 September 2014      Revised:  19 September 2014      Published:  05 January 2015
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  81.15.Kk (Vapor phase epitaxy; growth from vapor phase)  
  81.05.Ea (III-V semiconductors)  
  81.10.Aj (Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  

Project supported by the National Natural Science Foundation of China (Grant No. 61076010) and the International Science and Technology Cooperation Program of Science and Technology Bureau of Changchun, China (Grant No. 12ZX68).

Corresponding Authors:  Zhang Yuan-Tao, Zhang Bao-Lin     E-mail:;

Cite this article: 

Wang Lian-Kai, Liu Ren-Jun, Lü You, Yang Hao-Yu, Li Guo-Xing, Zhang Yuan-Tao, Zhang Bao-Lin High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition 2015 Chin. Phys. B 24 018102

[1] Yu C T, Shen C C, Ho H C, Chang H Y, Fu J S and Lin H K 2012 Asia-Pacific Microwave Conference 2012, Kaohsiung, Taiwan, China, p. 196
[2] Delaunay P Y, Nguyen B M, Hoffman D, Huang E K and Razeghi M 2009 IEEE Journal of Quantum Electronics 45 157
[3] Rodriguez J B, Cerutti L and Tournie E 2009 Appl. Phys. Lett. 94 023506
[4] Cathabard O, Teissier R, Devenson J, Moreno J C and Baranov A N 2010 Appl. Phys. Lett. 96 141110
[5] Loeber T H, Hein E A, Hoffmann D, Heisel C and Fouckhardt H 2013 2nd International Conference on Applied Materials and Electronics Engineering, Hong Kong, China
[6] Xu Y, Wang Y B, Zhang Y, Song G and Chen L H 2013 Chin. Phys. B 22 094208
[7] Makogon Y M, Pavlova O P, Sydorenko S I, Beddies G, Daniel M, Verbytska T, Bogdanov S E and Shkarban R A 2011 Metallofizika I Noveishie Tekhnologii 33 195
[8] Yang H Y, Liu R J, Wang L K, Lü Y, Li T T, Li G X, Zhang Y T and Zhang B L 2013 Chin. Phys. B 22 108402
[9] Afrailov M A, Andreev I A, Kunitsyna E V, Mikhailova M P, Yakovlev Y P and Erturk K 2006 6th International Conference of the Balkan Physical Union, August 22-26, 2006 (AIP Conference Proceedings)
[10] Razeghi M 2003 Eur. J. Appl. Phys. 23 149
[11] Biefeld R M 2002 Materials Science and Engineering: R: Reports 36 105
[12] Rogalski 2007 Infrared Phys. Technol. 50 240
[13] Nesher O and Klipstein P C 2006 Opto-Electron. Rev. 14 61
[14] Herbert K 2004 Physica E 20 196
[15] Wang L K, Liu R J, Yang H Y, Lv Y, Li G X, Zhang Y T and Zhang B L 2014 Chin. Phys. B 23 088110
[16] Kotaro Z, Rei H, Mizunori E, Masao N and Yasuhiko 2008 J. Cryst. Growth 310 4843
[17] Genichi T, Subir C and Yuin Wu 2005 Taguchi's Quality Engineering Handbook (John Wiley & Sons Inc)
[18] Zhou W, Tang W and Lau K M 2011 Appl. Phys. Lett. 99 221917
[19] Tinkham B P, Braun W, Kaganer V M, Satapathy D K, Jenichen B and Ploog K H 2007 Surf. Sci. 3 814
[20] Feng Z C, Hou F C, Webb J B, Shen Z X, Rusli E, Ferguson I T and Lu W 2008 Thin Solid Films 516 5493
[1] Molecular beam epitaxy growth of iodide thin films
Xinqiang Cai(蔡新强), Zhilin Xu(徐智临), Shuai-Hua Ji(季帅华), Na Li(李娜), and Xi Chen(陈曦). Chin. Phys. B, 2021, 30(2): 028102.
[2] Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition
Yan Wang(王岩), Shuai Luo(罗帅), Haiming Ji(季海铭), Di Qu(曲迪), and Yidong Huang(黄翊东). Chin. Phys. B, 2021, 30(1): 018106.
[3] Structural and optical characteristic features of RF sputtered CdS/ZnO thin films
Ateyyah M Al-Baradi, Fatimah A Altowairqi, A A Atta, Ali Badawi, Saud A Algarni, Abdulraheem S A Almalki, A M Hassanien, A Alodhayb, A M Kamal, M M El-Nahass. Chin. Phys. B, 2020, 29(8): 080702.
[4] Growth and physical characterization of high resistivityFe: β-Ga2O3 crystals
Hao Zhang(张浩), Hui-Li Tang(唐慧丽), Nuo-Tian He(何诺天), Zhi-Chao Zhu(朱智超), Jia-Wen Chen(陈佳文), Bo Liu(刘波), Jun Xu(徐军). Chin. Phys. B, 2020, 29(8): 087201.
[5] Thermal stability of magnetron sputtering Ge-Ga-S films
Lei Niu(牛磊), Yimin Chen(陈益敏), Xiang Shen(沈祥), Tiefeng Xu(徐铁峰). Chin. Phys. B, 2020, 29(8): 087803.
[6] Regulation mechanism of catalyst structure on diamond crystal morphology under HPHT process
Ya-Dong Li(李亚东), Yong-Shan Cheng(程永珊), Meng-Jie Su(宿梦洁), Qi-Fu Ran(冉启甫), Chun-Xiao Wang(王春晓), Hong-An Ma(马红安), Chao Fang(房超), Liang-Chao Chen(陈良超). Chin. Phys. B, 2020, 29(7): 078101.
[7] A low-dimensional crystal growth model on an isotropic and quasi-free sustained substrate
Chenxi Lu(卢晨曦), Senjiang Yu(余森江), Lingwei Li(李领伟), Bo Yang(杨波), Xiangming Tao(陶向明), Gaoxiang Ye(叶高翔). Chin. Phys. B, 2020, 29(3): 038101.
[8] Single crystal growth, structural and transport properties of bad metal RhSb2
D S Wu(吴德胜), Y T Qian(钱玉婷), Z Y Liu(刘子懿), W Wu(吴伟), Y J Li(李延杰), S H Na(那世航), Y T Shao(邵钰婷), P Zheng(郑萍), G Li(李岗), J G Cheng(程金光), H M Weng(翁红明), J L Luo(雒建林). Chin. Phys. B, 2020, 29(3): 037101.
[9] A numerical study on pattern selection in crystal growth by using anisotropic lattice Boltzmann-phase field method
Zhaodong Zhang(张兆栋), Yuting Cao(曹宇婷), Dongke Sun(孙东科), Hui Xing(邢辉), Jincheng Wang(王锦程), Zhonghua Ni(倪中华). Chin. Phys. B, 2020, 29(2): 028103.
[10] Structural and electrical transport properties of Cu-doped Fe1 -xCuxSe single crystals
He Li(李贺), Ming-Wei Ma(马明伟), Shao-Bo Liu(刘少博), Fang Zhou(周放), and Xiao-Li Dong(董晓莉). Chin. Phys. B, 2020, 29(12): 127404.
[11] Short-wavelength infrared InAs/GaSb superlattice hole avalanche photodiode
Jia-Feng Liu(刘家丰), Ning-Tao Zhang(张宁涛), Yan Teng(滕), Xiu-Jun Hao(郝修军), Yu Zhao(赵宇), Ying Chen(陈影), He Zhu(朱赫), Hong Zhu(朱虹), Qi-Hua Wu(吴启花), Xin Li(李欣), Bai-Le Chen(陈佰乐)§, and Yong Huang(黄勇). Chin. Phys. B, 2020, 29(11): 117301.
[12] Optical and electrical properties of InGaZnON thin films
Jian Ke Yao(姚建可), Fan Ye(叶凡), Ping Fan(范平). Chin. Phys. B, 2020, 29(1): 018105.
[13] Transport properties of topological nodal-line semimetal candidate CaAs3 under hydrostatic pressure
Jing Li(李婧), Ling-Xiao Zhao(赵凌霄), Yi-Yan Wang(王义炎), Xin-Min Wang(王欣敏), Chao-Yang Ma(麻朝阳), Wen-Liang Zhu(朱文亮), Mo-Ran Gao(高默然), Shuai Zhang(张帅), Zhi-An Ren(任治安), Gen-Fu Chen(陈根富). Chin. Phys. B, 2019, 28(4): 046202.
[14] Influence of low-temperature sulfidation on the structure of ZnS thin films
Shuzhen Chen(陈书真), Ligang Song(宋力刚), Peng Zhang(张鹏), Xingzhong Cao(曹兴忠), Runsheng Yu(于润升), Baoyi Wang(王宝义), Long Wei(魏龙), Rengang Zhang(张仁刚). Chin. Phys. B, 2019, 28(2): 024214.
[15] Multiple enlarged growth of single crystal diamond by MPCVD with PCD-rimless top surface
Ze-Yang Ren(任泽阳), Jun Liu(刘俊), Kai Su(苏凯), Jin-Feng Zhang(张金风), Jin-Cheng Zhang(张进成), Sheng-Rui Xu(许晟瑞), Yue Hao(郝跃). Chin. Phys. B, 2019, 28(12): 128103.
No Suggested Reading articles found!