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Chin. Phys. B, 2015, Vol. 24(1): 018102    DOI: 10.1088/1674-1056/24/1/018102
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High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition

Wang Lian-Kai, Liu Ren-Jun, Lü You, Yang Hao-Yu, Li Guo-Xing, Zhang Yuan-Tao, Zhang Bao-Lin
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Changchun 130012, China
Abstract  

Orthogonal experiments of GaSb films growth on GaAs(001) substrates have been designed and performed by using a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized GaSb thin film has a narrow full width at half maximum (358 arc sec) of the (004) ω-rocking curve, and a smooth surface with a low root-mean-square roughness of about 6 nm, which is typical in the case of the heteroepitaxial single-crystal films. In addition, we studied the effects of layer thickness of GaSb thin film on the density of dislocations by Raman spectra. It is believed that our research can provide valuable information for the fabrication of high-crystalline GaSb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices.

Keywords:  crystal growth      metal-organic chemical vapor deposition      thin films  
Received:  11 September 2014      Revised:  19 September 2014      Published:  05 January 2015
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  81.15.Kk (Vapor phase epitaxy; growth from vapor phase)  
  81.05.Ea (III-V semiconductors)  
  81.10.Aj (Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant No. 61076010) and the International Science and Technology Cooperation Program of Science and Technology Bureau of Changchun, China (Grant No. 12ZX68).

Corresponding Authors:  Zhang Yuan-Tao, Zhang Bao-Lin     E-mail:  zhangyt@jlu.edu.cn;zbl@jlu.edu.cn

Cite this article: 

Wang Lian-Kai, Liu Ren-Jun, Lü You, Yang Hao-Yu, Li Guo-Xing, Zhang Yuan-Tao, Zhang Bao-Lin High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition 2015 Chin. Phys. B 24 018102

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