Please wait a minute...
Chin. Phys. B, 2014, Vol. 23(8): 087504    DOI: 10.1088/1674-1056/23/8/087504
SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 Prev   Next  

Influence of magnetic layer thickness on [Fe80Ni20–O/SiO2]n multilayer thin films

Wei Jian-Qing, Geng Hao, Xu Lei, Wang Lai-Sen, Chen Yuan-Zhi, Yue Guang-Hui, Peng Dong-Liang
Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005, China
Abstract  In the present work, a series of [Fe80Ni20-O/SiO2]n multilayer thin films is fabricated using a reactive magnetron sputtering equipment. The thickness of SiO2 interlayer is fixed at 3 nm, while the thickness values of Fe80Ni20-O magnetic films range from 10 nm to 30 nm. All films present obvious in-plane uniaxial magnetic anisotropy. With increasing the Fe80Ni20-O layer thickness, the saturation magnetization increases slightly and the coercivity becomes larger due to the enlarged grain size, which could weaken the soft magnetic property. The results of high frequency magnetic permeability characterization show that films with thin magnetic layer are more suitable for practical applications. When the thickness of Fe80Ni20-O layer is 10 nm, the multilayer film exhibits the most comprehensive high-frequency magnetic property with a real permeability of 300 in gigahertz range.
Keywords:  magnetron sputtering      multilayer films      soft magnetic property      high frequency permeability     
Received:  04 September 2013      Published:  15 August 2014
PACS:  75.75.-c (Magnetic properties of nanostructures)  
  75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))  
  75.30.Gw (Magnetic anisotropy)  
  75.50.Gg (Ferrimagnetics)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2012CB933103), the National Natural Science Foundation of China (Grant Nos. 51371154, 51301145, 51171158, and 50825101), and the Fundamental Research Funds for the Central Universities of China (Grant No. 201212G001).
Corresponding Authors:  Wang Lai-Sen, Peng Dong-Liang     E-mail:  wangls@xmu.edu.cn;dlpeng@xmu.edu.cn

Cite this article: 

Wei Jian-Qing, Geng Hao, Xu Lei, Wang Lai-Sen, Chen Yuan-Zhi, Yue Guang-Hui, Peng Dong-Liang Influence of magnetic layer thickness on [Fe80Ni20–O/SiO2]n multilayer thin films 2014 Chin. Phys. B 23 087504

[1] Wang S X, Sun N X, Yamaguchi M and Yabukami S 2000 Nature 407 151
[2] Cai J W and Lai W Y 2001 Chin. Phys. Lett. 18 1651
[3] Ikeda K, Kobayashi K and Fujimoto M 2002 J. Appl. Phys. 92 5395
[4] Ohnuma S, Kobayashi N, Masumoto T, Mitani S and Fujimori H 1999 J. Appl. Phys. 85 4574
[5] Snoek J L 1947 Nature 160 90
[6] Xie T, Zheng D S, Li X H, Ma Y G, Wei F L and Yang Z 2002 Chin. Phys. 11 725
[7] Fu Y, Yang Z, Matsumoto M, Liu X X and Morisako A 2006 Chin. Phys. 15 1351
[8] Li S D, Huang Z G, Duh J G and Yamaguchi M 2008 Appl. Phys. Lett. 92 092501
[9] Ma Y G and Ong C K 2007 J. Phys. D: Appl. Phys. 40 3286
[10] Ma Q, Jiang J J, Bie S W, Tian B, Liang P and He H H 2009 Chin. Phys. B 18 2063
[11] Xu F, Zhang X Y, Phuoc N N, Ma Y G and Ong C K 2009 J. Appl. Phys. 105 043902
[12] Zuo H P, Ge S H, Wang Z K, Xiao Y H, Yao D S and Li Y B 2009 J. Magn. Magn. Mater. 321 3453
[13] Geng H, Wei J Q, Nie S J, Wang Y, Wang Z W, Wang L S, Chen Y Z, Peng D L, Li F S and Xue D S 2013 Mater. Lett. 92 346
[14] Geng H, Wang Y, Wang J B, Li Z Q, Nie S J, Wang L S, Chen Y Z, Peng D L and Bai H L 2012 Mater. Lett. 67 99
[15] Tang J, Ma B, Zhang Z Z and Jin Q Y 2010 Chin. Phys. Lett. 27 077502
[16] Chai G Z, Yang Y C, Zhu J Y, Lin M, Sui W B, Guo D W, Li X L and Xue D S 2010 Appl. Phys. Lett. 96 012505
[17] Herzer G 1990 IEEE. Trans. Magn. 26 1397
[1] Influence of CdS films synthesized by different methods on the photovoltaic performance of CdTe/CdS thin film solar cells
Jun Wang(汪俊), Yuquan Wang(王玉全), Cong Liu(刘聪), Meiling Sun(孙美玲), Cao Wang(王操), Guangchao Yin(尹广超), Fuchao Jia(贾福超), Yannan Mu(牟艳男), Xiaolin Liu(刘笑林), Haibin Yang(杨海滨). Chin. Phys. B, 2020, 29(9): 098802.
[2] Techniques of microwave permeability characterization for thin films
Xi-Ling Li(李喜玲), Jian-Bo Wang(王建波), Guo-Zhi Chai(柴国志). Chin. Phys. B, 2019, 28(9): 097504.
[3] A general method for large-scale fabrication of Cu nanoislands/dragonfly wing SERS flexible substrates
Yuhong Wang(王玉红), Mingli Wang(王明利), Lin Shen(沈琳), Yanying Zhu(朱艳英), Xin Sun(孙鑫), Guochao Shi(史国超), Xiaona Xu(许晓娜), Ruifeng Li(李瑞峰), Wanli Ma(马万里). Chin. Phys. B, 2018, 27(1): 017801.
[4] Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge1-xSnx films on Si substrate
H Mahmodi, M R Hashim. Chin. Phys. B, 2017, 26(5): 056801.
[5] Low-temperature phase transformation of CZTS thin films
Wei Zhao(赵蔚), Lin-Yuan Du(杜霖元), Lin-Lin Liu(刘林林), Ya-Li Sun(孙亚利), Zhi-Wei Liu(柳志伟), Xiao-Yun Teng(滕晓云), Juan Xie(谢娟), Kuang Liu(刘匡), Wei Yu(于威), Guang-Sheng Fu(傅广生), Chao Gao(高超). Chin. Phys. B, 2017, 26(4): 046402.
[6] Effects of spacer layers on magnetic properties and exchange couplings of Nd-Fe-B/Nd-Ce-Fe-B multilayer films
Ya-Chao Sun(孙亚超), Ming-Gang Zhu(朱明刚), Wei Liu(刘伟), Rui Han(韩瑞), Wen-Chen Zhang(张文臣), Yan-Feng Li(李岩峰), Wei Li(李卫). Chin. Phys. B, 2017, 26(10): 107501.
[7] Field emission properties of a-C and a-C:H films deposited on silicon surfaces modified with nickel nanoparticles
Jin-Long Jiang(姜金龙), Yu-Bao Wang(王玉宝), Qiong Wang(王琼), Hao Huang(黄浩), Zhi-Qiang Wei(魏智强), Jun-Ying Hao(郝俊英). Chin. Phys. B, 2016, 25(4): 048101.
[8] Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas
Yan Zhao(赵艳), Wei Gao(高伟), Bo Xu(徐博), Ying-Ai Li(李英爱), Hong-Dong Li(李红东), Guang-Rui Gu(顾广瑞), Hong Yin(殷红). Chin. Phys. B, 2016, 25(10): 106801.
[9] Effects of N2/O2 flow rate on the surface properties and biocompatibility of nano-structured TiOxNy thin films prepared by high vacuum magnetron sputtering
Sehrish Saleem, R. Ahmad, Uzma Ikhlaq, R. Ayub, Jin Wei Hong, Xu Rui Zhen, Li Peng Hui, Khizra Abbas, Paul K. Chu. Chin. Phys. B, 2015, 24(7): 075202.
[10] Effect of thermal pretreatment of metal precursor on the properties of Cu2ZnSnS4 films
Wang Wei, Shen Hong-Lie, Jin Jia-Le, Li Jin-Ze, Ma Yue. Chin. Phys. B, 2015, 24(5): 056805.
[11] Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications
Gu Jin-Hua, Si Jia-Le, Wang Jiu-Xiu, Feng Ya-Yang, Gao Xiao-Yong, Lu Jing-Xiao. Chin. Phys. B, 2015, 24(11): 117703.
[12] Structures and optical properties of tungsten oxide thin films deposited by magnetron sputtering of WO3 bulk:Effects of annealing temperatures
Zhang Feng, Wang Hai-Qian, Wang Song, Wang Jing-Yang, Zhong Zhi-Cheng, Jin Ye. Chin. Phys. B, 2014, 23(9): 098105.
[13] Sputtering pressure influence on growth morphology, surface roughness, and electrical resistivity for strong anisotropy beryllium film
Luo Bing-Chi, Li Kai, Kang Xiao-Li, Zhang Ji-Qiang, He Yu-Dan, Luo Jiang-Shan, Wu Wei-Dong, Tang Yong-Jian. Chin. Phys. B, 2014, 23(6): 066804.
[14] Structural and electrical characterization of annealed Si1-xCx/SiC thin film prepared by magnetron sputtering
Huang Shi-Hua, Liu Jian. Chin. Phys. B, 2014, 23(5): 058105.
[15] Formation of ZnGa2O4 films by multilayer deposition and subsequent thermal annealing
Yan Jin-Liang, Zhao Yin-Nü, Li Chao. Chin. Phys. B, 2014, 23(4): 048105.
No Suggested Reading articles found!