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Chin. Phys. B, 2014, Vol. 23(6): 066103    DOI: 10.1088/1674-1056/23/6/066103

Retarded thermal oxidation of strained Si substrate

Sun Jia-Baoa, Tang Xiao-Yua, Yang Zhou-Weia, Shi Yia, Zhao Yia b
a School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
Abstract  Strained Si is recognized as a necessary technology booster for modern integrated circuit technology. However, the thermal oxidation behaviors of strained Si substrates are not well understood yet despite their importance. In this study, we for the first time experimentally find that all types of strained Si substrates (uniaxial tensile, uniaxial compressive, biaxial tensile, and biaxial compressive) show smaller thermal oxidation rates than an unstrained Si substrate. The possible mechanisms for these retarded thermal oxidation rates in strained Si substrates are also discussed.
Keywords:  strained Si      uniaxial and biaxial      tensile and compressive stresses      thermal oxidation rates  
Received:  19 October 2013      Revised:  25 December 2013      Published:  15 June 2014
PACS:  61.72.uf (Ge and Si)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  81.16.Pr (Micro- and nano-oxidation) (Strain and interface effects)  
Fund: Project supported by the National Key Basic Research Project of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 61376097), and the Program B for Outstanding Ph. D. Candidate of Nanjing University, China (Grant No. 201301B005).
Corresponding Authors:  Zhao Yi     E-mail:

Cite this article: 

Sun Jia-Bao, Tang Xiao-Yu, Yang Zhou-Wei, Shi Yi, Zhao Yi Retarded thermal oxidation of strained Si substrate 2014 Chin. Phys. B 23 066103

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