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Chin. Phys. B, 0, Vol. (): 65201-065201    doi: 10.1088/1674-1056/23/6/065201
PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES < Prev article   Next article >  

Characteristics of dual-frequency capacitively coupled SF6/O2 plasma and plasma texturing of multi-crystalline silicon

Xu Dong-Shenga, Zou Shuaia b, Xin Yua, Su Xiao-Donga, Wang Xu-Shengb
a. Provincial Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China;
b. Canadian Solar Inc. China
Abstract  Due to environmental friendly, much attention has now been paid to dry plasma texturing technique serving as an alternative candidate for multicrystalline silicon (mc-Si) surface texturing. In this paper, capacitively coupled plasma (CCP) driven by dual frequency (DF) of 40.68 MHz and 13.56 MHz is first used for plasma texturing of mc-Si with SF6/O2 gas mixture. Using hairpin resonant probe and optical emission techniques, DF-CCP characteristics and the influence on mc-silicon surface plasma texturing are investigated at different flow rate ratios, pressures, and radio-frequency (RF) input powers. Experimental results show that suitable plasma texturing of mc-silicon occurs only in a narrow range of plasma parameters, where electron density ne must be larger than 6.3× 109 cm-3 and ratio of spectral intensity of F atom to that of O atom ([F]/[O]) in the plasma must be between 0.8 and 0.3. Out of this range, no cone-like structure is formed on the mc-silicon surface. In our experiments, the lowest reflectance of about 7.3% for mc-silicon surface texturing is obtained at an [F]/[O] of 0.5 and ne of 6.9× 109 cm-3.
Keywords:  dual frequency capacitively coupled plasma      plasma texturing      multi-crystalline silicon      electron density     
Received:  12 November 2013     
PACS numbers:  52.27.Cm (Multicomponent and negative-ion plasmas)  
  52.70.Ds (Electric and magnetic measurements)  
  52.70.Nc (Particle measurements)  
Fund: Project supported by the Prospective Project of Industry-University-Research Institution of Jiangsu Province, China (Grant No. BY2010125) and the National Natural Science Foundation of China (Grant No. 11175127).
Corresponding Authors:  Xin Yu     E-mail:  xylzf_1999@suda.edu.cn
About author:  2014-4-15

Cite this article: 

Xu Dong-Sheng, Zou Shuai, Xin Yu, Su Xiao-Dong, Wang Xu-Sheng. Characteristics of dual-frequency capacitively coupled SF6/O2 plasma and plasma texturing of multi-crystalline silicon. Chin. Phys. B, 0, (): 65201-065201.

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