Computation of the locus crossing point location of MC circuit

doi:10.1088/1674-1056/23/4/048401

Abstract In this paper, the crossing point property of the i-v hysteresis curve in a memristor-capacitor (MC) circuit is analyzed. First, the ideal passive memristor on the crossing point property of i-v hysteresis curve is studied. Based on the analysis, the analytical derivation with respect to the crossing point location of MC circuit is given. Then the example of MC with linear memristance-versus-charge state map is demonstrated to discuss the drift property of cross-point location, caused by the frequency and capacitance value.

Keywords: memristor memristive system crossing point pinched hysteresis loop

Received: 03 September 2013
Revised: 18 September 2013
Accepted manuscript online:

PACS:	84.30.Bv	(Circuit theory)
	85.35.-p	(Nanoelectronic devices)
	84.32.-y	(Passive circuit components)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61171017).

Corresponding Authors: Liu Hai-Jun
E-mail: liuhaijun@nudt.edu.cn

About author: 84.30.Bv; 85.35.-p; 84.32.-y

Cite this article:

Liu Hai-Jun (刘海军), Li Zhi-Wei (李智炜), Bu Kai (步凯), Sun Zhao-Lin (孙兆林), Nie Hong-Shan (聂洪山) Computation of the locus crossing point location of MC circuit 2014 Chin. Phys. B 23 048401

[1]	Salaoru I, Khiat A, Li Q J, Berdan R, Papavassiliou C, Toumazou C and Prodromakis T Acs. Nano. to be published
[2]	Ligang G, Alibart F and Strukov D B 2013 IEEE T. Nanotechnol. 12 115
[3]	Pickett M D, Medeiros-Ribeiro G and Williams R S 2013 Nat. Mater. 12 114
[4]	Li Z W, Liu H J and Xu X 2013 Acta Phys. Sin. 62 096401 (in Chinese)
[5]	Fang X D, Tang Y H and Wu J J 2012 Chin. Phys. B 21 098901
[6]	Tian X B and Xu H 2013 Chin. Phys. B 22 088501
[7]	Wang W D, Yu Q, Xu C X and Cui Y H 2009 International Conference on Communications, Circuits and Systems, July 23-25, 2009, Milpitas, California, USA, p. 969
[8]	Bao B C, Xu J P, Zhou G H, Ma Z H and Zou L 2011 Chin. Phys. B 20 120502
[9]	Bao B C, Shi G D, Xu J P, Liu Z and Pan S H 2011 Sci. China: Technol. Sci. 54 1
[10]	Joglekar Y N and Wolf S J 2009 Eur. J. Phys. 30 661
[11]	Slipko V A, Pershin Y V and Ventra M D 2013 Phys. Rev. E 87 042103
[12]	Song D H, Lü M F, Reng X, Li M M and Zu Y X 2012 Acta Phys. Sin. 61 118101 (in Chinese)
[13]	Leon C 2003 P. IEEE 9 1830
[14]	Biolek Z, Biolek D and Biolkova V 2012 IEEE T. Circuits-II 59 607
[15]	Biolek D, Biolek Z and Biolkova V 2011 Electron. Lett. 47 5
[16]	Leon C 2011 Appl. Phys. A 102 765
[17]	Strukov D B, Snider G S, Stewart D R and Williams R S 2008 Nature 453 80

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Computation of the locus crossing point location of MC circuit

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