| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits |
| Qian Li-Bo (钱利波)a, Zhu Zhang-Ming (朱樟明)b, Xia Yin-Shui (夏银水)a, Ding Rui-Xue (丁瑞雪)b, Yang Yin-Tang (杨银堂)b |
a School of Information Science and Engineering, Ningbo University, Ningbo 315211, China;
b School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, China |
|
|
|
|
Abstract Through-silicon-via (TSV) to TSV crosstalk noise is one of the key factors affecting the signal integrity of three-dimensional integrated circuits (3D ICs). Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 mV and 379 mV reductions in the peak noise voltage, respectively.
|
Received: 03 September 2013
Revised: 26 November 2013
Accepted manuscript online:
|
|
PACS:
|
84.30.-r
|
(Electronic circuits)
|
| |
84.30.Bv
|
(Circuit theory)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61131001, 61322405, 61204044, 61376039, and 61334003). |
Corresponding Authors:
Qian Li-Bo
E-mail: qianlibo@nbu.edu.cn
|
Cite this article:
Qian Li-Bo (钱利波), Zhu Zhang-Ming (朱樟明), Xia Yin-Shui (夏银水), Ding Rui-Xue (丁瑞雪), Yang Yin-Tang (杨银堂) Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits 2014 Chin. Phys. B 23 038402
|
| [1] |
Pavlidis V F and Friedman E G 2009 Three-dimensional Integrated Circuit Design (San Mateo: Morgan Kaufmann) p. 123
|
| [2] |
Xie Y, Cong J and Sapatnekar S 2009 Three Dimensional IC: Design, CAD, and Architecture (New York: Springer) p. 59
|
| [3] |
Qian L B, Zhu Z M and Yang Y T 2011 Chin. Phys. B 20 108401
|
| [4] |
Zhu Z M, Zuo P and Yang Y T 2011 Acta Phys. Sin. 60 118001 (in Chinese)
|
| [5] |
Kim D H, Mukhopadhyay S and Lim S K 2011 IEEE Trans. Components, Packaging, and Manufacturing Technology 1 168
|
| [6] |
Xu C, Suaya R and Banerjee K 2011 IEEE Trans. Electron. Devices 58 4024
|
| [7] |
Song T G, Liu C, Peng Y R and Kim J H 2013 ACM/IEEE International Conference on Computer-Aided Design, June 1–7, 2013 Austin, USA, p. 1
|
| [8] |
Pak J S, Ryu C H and Kim J H International Conference on Electronic Material and Packaging, November 19–22, 2007 Daejeon, Korea, p. 1
|
| [9] |
Sun X, Zhu Y H, Ma S L and Miao M IEEE Electronics Packing Technology Conference, December 7–9, 2011 Singapore, p. 171
|
| [10] |
Engin A E and Narasimhan S R 2013 IEEE Trans. Electromagnetic Compatibility 55 149
|
| [11] |
Khan N H, Alam S M and Hassoun S 2009 IEEE International Conference on 3D System Integration, September 28–30, 2009 San Francisco, USA, p. 1
|
| [12] |
Cho J Y, Song E W, Yoon K Y and Pak J S 2011 IEEE Trans. Component, Packaging and Manufacturing Technology 1 220
|
| [13] |
Li E P 2012 Electrical Modeling and Design for 3D System Integration (New York: Wiley-Blackwell) p. 203
|
| [14] |
Katti G, Stucchi M, Meyer K D and Dehaene W 2010 IEEE Trans. Electron. Devices 57 256
|
| [15] |
Ansys HFSS v13.0
|
| [16] |
Banerjee K and Mehrotra A 2002 IEEE Trans. Electron Devices 49 2001
|
| [17] |
Bogatin E 2004 Signal Integrity: Simplified (Kansas: Prentice Hall PTR) p. 89
|
| [18] |
Zhu Z M and Liu S B 2012 Chin. Phys. B 21 028401
|
| [19] |
Verghese N, Chu W K, and McCanny J 2004 Modeling and Analysis of Substrate Noise Coupling in Mixed signal ICs (San Jose: Springer) p. 55
|
| [20] |
Synopsys HSPICE c-2009.09
|
| [21] |
Kim J H, Cho J H and Kim J H Electronic System-Integration Technology Conference, September 13–16, 2010 Berlin, Germany, p. 70
|
| [22] |
Xu Z and Lu J Q 2012 IEEE Electron. Device Lett. 33 1441
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
