Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

doi:10.1088/1674-1056/23/2/027302

Abstract The kink effect in current–voltage (IV) characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current (DC) IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage (V_ds) and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.

Keywords: kink effect deep levels hot electrons GaN-based HEMT

Received: 05 May 2013
Revised: 28 May 2013
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	72.20.Jv	(Charge carriers: generation, recombination, lifetime, and trapping)
	79.20.Ap	(Theory of impact phenomena; numerical simulation)

Fund: Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915).

Corresponding Authors: Ma Xiao-Hua
E-mail: xhma@xidian.edu.cn

About author: 73.61.Ey; 72.20.Jv; 79.20.Ap

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Ma Xiao-Hua (马晓华), Lü Min (吕敏), Pang Lei (庞磊), Jiang Yuan-Qi (姜元祺), Yang Jing-Zhi (杨靖治), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier 2014 Chin. Phys. B 23 027302

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Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

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