Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

doi:10.1088/1674-1056/23/2/027101

Abstract Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current–voltage and capacitance–voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger’s and Poisson’s equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode.

Keywords: Al(Ga)N/GaN Schottky barrier height current-transport mechanism leakage current

Received: 20 March 2013
Revised: 28 April 2013
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	11.40.-q	(Currents and their properties)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60890192, 60876009, and 11174182).

Corresponding Authors: Feng Zhi-Hong
E-mail: blueledviet@yahoo.com.cn

About author: 71.55.Eq; 73.30.+y; 85.30.Mn; 11.40.-q

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Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Cai Shu-Jun (蔡树军) Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes 2014 Chin. Phys. B 23 027101

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Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

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