Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer

doi:10.1088/1674-1056/23/2/026801

Abstract The effects of V/Ⅲ growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/Ⅲ ratio. With decreasing V/Ⅲ ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/Ⅲ ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.

Keywords: V/Ⅲ ratio a-plane GaN InGaN interlayer metalorganic chemical vapor deposition

Received: 18 July 2013
Revised: 13 August 2013
Accepted manuscript online:

PACS:	68.37.Ps	(Atomic force microscopy (AFM))
	68.55.A-	(Nucleation and growth)
	78.55.Cr	(III-V semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 91233111, 61274041, 11275228, 61006004, and 61076001), the Special Funds for Major State Basic Research Project (973 Program) of China (Grant No. 2012CB619305), the 863 High Technology R & D Program of China (Grant No. 2011AA03A101) and the Special Fund for LED Industrial Development of Guangdong Province of China (Grant No. 2012A080302003).

Corresponding Authors: Wang Jian-Xia, Wang Lian-Shan, Yang Shao-Yan
E-mail: ls-wang@semi.ac.cn;ls-shan@semi.ac.cn;sh-yyang@semi.ac.cn

About author: 68.37.Ps; 68.55.A-; 78.55.Cr; 81.15.Gh

Cite this article:

Wang Jian-Xia (王建霞), Wang Lian-Shan (汪连山), Yang Shao-Yan (杨少延), Li Hui-Jie (李辉杰), Zhao Gui-Juan (赵桂娟), Zhang Heng (张恒), Wei Hong-Yuan (魏鸿源), Jiao Chun-Mei (焦春美), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer 2014 Chin. Phys. B 23 026801

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Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer

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