An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS

doi:10.1088/1674-1056/23/12/128501

Abstract In this paper, an analytical model for the vertical electric field distribution and optimization of a high voltage-reduced bulk field (REBULF) lateral double-diffused metal–oxide-semiconductor (LDMOS) transistor is presented. The dependences of the breakdown voltage on the buried n-layer depth, thickness, and doping concentration are discussed in detail. The REBULF criterion and the optimal vertical electric field distribution condition are derived on the basis of the optimization of the electric field distribution. The breakdown voltage of the REBULF LDMOS transistor is always higher than that of a single reduced surface field (RESURF) LDMOS transistor, and both analytical and numerical results show that it is better to make a thick n-layer buried deep into the p-substrate.

Keywords: REBULF LDMOS vertical electric field breakdown voltage

Received: 20 May 2014
Revised: 28 June 2014
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the Scientific Research Fund of Education Department of Sichuan Province, China (Grant No. 14ZB0132) and the Key Project of Xihua University, China (Grant No. z1323318).

Corresponding Authors: Hu Xia-Rong
E-mail: h1_x2_r3@126.com

Cite this article:

Hu Xia-Rong (胡夏融), Lü Rui (吕瑞) An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS 2014 Chin. Phys. B 23 128501


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An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS

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