Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

doi:10.1088/1674-1056/23/12/127503

Abstract

Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ～ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ～ 320 ℃, followed by annealing at 650 ℃ in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed.

Keywords: magnetic semiconductors magnetic annealing defects zinc oxides

Received: 06 June 2014
Revised: 25 July 2014
Accepted manuscript online:

PACS:	75.50.Pp	(Magnetic semiconductors)
	75.60.Nt	(Magnetic annealing and temperature-hysteresis effects)
	61.72.jd	(Vacancies)
	78.55.Et	(II-VI semiconductors)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 51372135), the Research Project of the Chinese Ministry of Education (Grant No. 113007A), and the Tsinghua University Initiative Scientific Research Program.

Corresponding Authors: Zhang Zheng-Jun
E-mail: zjzhang@tsinghua.edu.cn

Cite this article:

Ning Shuai (宁帅), Zhan Peng (战鹏), Wang Wei-Peng (王炜鹏), Li Zheng-Cao (李正操), Zhang Zheng-Jun (张政军) Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field 2014 Chin. Phys. B 23 127503


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Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

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