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Chin. Phys. B, 2014, Vol. 23(12): 124215    DOI: 10.1088/1674-1056/23/12/124215
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure

Cao Chen, Zhang Bing, Wu Long-Sheng, Li Na, Wang Jun-Feng
Xi'an Microelectronics Technology Institute, Xi'an 710071, China
Abstract  A quantum efficiency analytical model for complementary metal–oxide–semiconductor (CMOS) image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160× 160 pixels array, which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.
Keywords:  CMOS image sensor      quantum efficiency      pinned photodiode      analytical model  
Received:  18 May 2014      Revised:  24 June 2014      Accepted manuscript online: 
PACS:  42.79.Pw (Imaging detectors and sensors)  
  85.30.-z (Semiconductor devices)  
  78.40.Fy (Semiconductors)  
Fund: Project supported by the National Defense Pre-Research Foundation of China (Grant No. 51311050301095).
Corresponding Authors:  Cao Chen     E-mail:  intercaochen@163.com

Cite this article: 

Cao Chen, Zhang Bing, Wu Long-Sheng, Li Na, Wang Jun-Feng A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure 2014 Chin. Phys. B 23 124215

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