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Chin. Phys. B, 2014, Vol. 23(10): 107101    DOI: 10.1088/1674-1056/23/10/107101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction

Li Shi-Bina, Yu Hong-Pinga, Zhang Tinga, Chen Zhia b, Wu Zhi-Minga
a State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
b Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY 40506, USA
Abstract  High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6×1014 cm -2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650℃ to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.
Keywords:  polarization      AlGaN      carrier concentration      Ohmic contact  
Received:  13 March 2014      Revised:  22 April 2014      Published:  15 October 2014
PACS:  71.10.Ca (Electron gas, Fermi gas)  
  71.15.-m (Methods of electronic structure calculations)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  77.22.Ej (Polarization and depolarization)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61204098 and 61371046).
Corresponding Authors:  Li Shi-Bin     E-mail:  shibinli@uestc.edu.cn
About author:  71.10.Ca; 71.15.-m; 73.40.Kp; 77.22.Ej

Cite this article: 

Li Shi-Bin, Yu Hong-Ping, Zhang Ting, Chen Zhi, Wu Zhi-Ming Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction 2014 Chin. Phys. B 23 107101

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