L10 FePt thin films with [001] crystalline growth fabricated by ZnO addition and rapid thermal annealing

doi:10.1088/1674-1056/22/8/087504

Abstract FePt films with a high degree of order S of the L1₀ structure (S > 0.90) and well defined [001] crystalline growth perpendicular to the film plane are fabricated on thermally oxidized Si substrates by the addition of ZnO and a successive rapid thermal annealing (RTA) process. The optimum condition to prepare high-ordering L1₀ FePtZnO films is 20 vol% ZnO addition and 450 ℃ annealing. The effect of the ZnO additive on the ordering process of the L1₀ FePtZnO films is discussed. In the annealing process, Zn atoms move to the film surface and evaporate. The motion of the Zn atoms accelerates the intergrain exchange and decreases the ordering temperature.

Keywords: FePt thin film magnetic recording material rapid-thermal-annealing oxide addition

Received: 07 December 2012
Revised: 23 January 2013
Accepted manuscript online:

PACS:	75.50.Ss	(Magnetic recording materials)
	75.70.-i	(Magnetic properties of thin films, surfaces, and interfaces)
	75.50.Bb	(Fe and its alloys)
	81.40.Rs	(Electrical and magnetic properties related to treatment conditions)

Corresponding Authors: Liu Xi
E-mail: liuxi@mail.lzjtu.cn

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Liu Xi (刘曦), Ishio Shunji L1₀ FePt thin films with [001] crystalline growth fabricated by ZnO addition and rapid thermal annealing 2013 Chin. Phys. B 22 087504

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L10 FePt thin films with [001] crystalline growth fabricated by ZnO addition and rapid thermal annealing

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L1₀ FePt thin films with [001] crystalline growth fabricated by ZnO addition and rapid thermal annealing