Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode

doi:10.1088/1674-1056/22/7/077102

Abstract An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage (G-V) curve and found to be in good agreement with the ones gotten by using the capacitance-voltage (C-V) curve integration and the plot of dV/zd(lnI) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed.

Keywords: AlGaN/GaN heterostructure Schottky diode threshold voltage series resistance

Received: 05 December 2012
Revised: 25 February 2013
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	74.78.Fk	(Multilayers, superlattices, heterostructures)
	84.37.+q	(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
	55.30.Kk

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60890192, 60876009, and 11174182) and the Foundation of Key Laboratory, China.

Corresponding Authors: Feng Zhi-Hong
E-mail: blueledviet@yahoo.com.cn

Cite this article:

Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Sheng Bai-Cheng (盛百城), Cai Shu-Jun (蔡树军), Liu Bo (刘波), Lin Zhao-Jun (林兆军) Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode 2013 Chin. Phys. B 22 077102

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Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode

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