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Chin. Phys. B, 2013, Vol. 22(7): 077102    DOI: 10.1088/1674-1056/22/7/077102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode

Lü Yuan-Jiea, Feng Zhi-Honga, Gu Guo-Donga, Dun Shao-Boa, Yin Jia-Yuna, Han Ting-Tinga, Sheng Bai-Chenga, Cai Shu-Juna, Liu Boa, Lin Zhao-Junb
a Science and Technology on Application Specific Integrated Circuit (ASIC) Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China
Abstract  An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage (G-V) curve and found to be in good agreement with the ones gotten by using the capacitance-voltage (C-V) curve integration and the plot of dV/zd(lnI) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed.
Keywords:  AlGaN/GaN heterostructure      Schottky diode      threshold voltage      series resistance  
Received:  05 December 2012      Revised:  25 February 2013      Published:  01 June 2013
PACS:  71.55.Eq (III-V semiconductors)  
  74.78.Fk (Multilayers, superlattices, heterostructures)  
  84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))  
  55.30.Kk  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60890192, 60876009, and 11174182) and the Foundation of Key Laboratory, China.
Corresponding Authors:  Feng Zhi-Hong     E-mail:  blueledviet@yahoo.com.cn

Cite this article: 

Lü Yuan-Jie, Feng Zhi-Hong, Gu Guo-Dong, Dun Shao-Bo, Yin Jia-Yun, Han Ting-Ting, Sheng Bai-Cheng, Cai Shu-Jun, Liu Bo, Lin Zhao-Jun Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode 2013 Chin. Phys. B 22 077102

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