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Chin. Phys. B, 2013, Vol. 22(6): 067104    DOI: 10.1088/1674-1056/22/6/067104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors

Lü Yuan-Jiea b, Feng Zhi-Honga, Cai Shu-Juna, Dun Shao-Boa, Liu Boa, Yin Jia-Yuna, Zhang Xiong-Wena, Fang Yu-Longa, Lin Zhao-Junb, Meng Ling-Guob, Luan Chong-Biaob
a Science and Technology on Application Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China
Abstract  Using measured capacitance-voltage curves and current-voltage characteristics for the AlGaN/AlN/GaN heterostructure field-effect transistors with different gate lengths and drain-to-source distances, the influence of drain bias on the electron mobility is investigated. It is found that below the knee voltage the longitudinal optical (LO) phonon scattering and interface roughness scattering are dominant for the sample with a large ratio of gate length to drain-to-source distance (here 4/5), and the polarization Coulomb field scattering is dominant for the sample with a small ratio (here 1/5). However, the above polarization Coulomb field scattering is weakened in the sample with a small drain-to-source distance (here 20 μm) compared with the one with a large distance (here 100 μm). This is due to the induced strain in the AlGaN layer caused by the drain bias.
Keywords:  AlGaN/GaN heterostructures      electron mobility      drain bias      electron scattering  
Received:  31 July 2012      Revised:  08 November 2012      Published:  01 May 2013
PACS:  71.55.Eq (III-V semiconductors)  
  77.22.Ch (Permittivity (dielectric function))  
  77.22.Ej (Polarization and depolarization)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182 and 10774090).
Corresponding Authors:  Feng Zhi-Hong     E-mail:  blueledviet@yahoo.com.cn

Cite this article: 

Lü Yuan-Jie, Feng Zhi-Hong, Cai Shu-Jun, Dun Shao-Bo, Liu Bo, Yin Jia-Yun, Zhang Xiong-Wen, Fang Yu-Long, Lin Zhao-Jun, Meng Ling-Guo, Luan Chong-Biao Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors 2013 Chin. Phys. B 22 067104

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