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Chin. Phys. B, 2013, Vol. 22(6): 066101    DOI: 10.1088/1674-1056/22/6/066101
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Growth and characterization of GaAs/InxGa1-xAs/GaAs axial nanowire heterostructures with symmetrical heterointerfaces

Lü Xiao-Long (吕晓龙), Zhang Xia (张霞), Liu Xiao-Long (刘小龙), Yan Xin (颜鑫), Cui Jian-Gong (崔建功), Li Jun-Shuai (李军帅), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏)
State Key Laboratory of Information Photonics & Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Abstract  We report on the Au-assisted vapour-liquid-solid (VLS) growth of GaAs/InxGa1-xAs/GaAs (0.2 ≤ x ≤ 1) axial double-heterostructure nanowires on GaAs (111) B substrates via metal-organic chemical vapor deposition (MOCVD) technique. The influence of indium content in Au particle on the morphology of nanowires is investigated systematically. A short period of pre-introduced indium precursor before the growth of InxGa1-xAs segment, coupled with a group III precursor interruption, is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section. The nanowire morphology, such as kinking and tapering, are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.
Keywords:  nanostructures      nanowire heterostructures      metal-organic chemical vapor deposition  
Received:  22 August 2012      Revised:  27 November 2012      Accepted manuscript online: 
PACS:  61.46.Hk (Nanocrystals)  
  68.37.Lp (Transmission electron microscopy (TEM))  
  61.46.Km (Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2010CB327600), the National Natural Science Foundation of China (Grant Nos. 61020106007 and 61077049), the International Science & Technology Cooperation Program of China (Grant No. 2011DFR11010), the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20120005110011), and the 111 Program of China (Grant No. B07005).
Corresponding Authors:  Zhang Xia     E-mail:  xzhang@bupt.edu.cn

Cite this article: 

Lü Xiao-Long (吕晓龙), Zhang Xia (张霞), Liu Xiao-Long (刘小龙), Yan Xin (颜鑫), Cui Jian-Gong (崔建功), Li Jun-Shuai (李军帅), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏) Growth and characterization of GaAs/InxGa1-xAs/GaAs axial nanowire heterostructures with symmetrical heterointerfaces 2013 Chin. Phys. B 22 066101

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