Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors

doi:10.1088/1674-1056/22/4/047102

Abstract Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was found there is a significant difference between Schottky drain AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in two-dimensional electron gas (2DEG) electron mobility in the gate-drain channel. We attribute this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly.

Keywords: AlGaN/AlN/GaN HFET Schottky drain contact AlGaN barrier layer strain polarization Coulomb field scattering

Received: 26 June 2012
Revised: 01 August 2012
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	72.10.-d	(Theory of electronic transport; scattering mechanisms)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11174182) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110131110005).

Corresponding Authors: Lin Zhao-Jun
E-mail: linzj@sdu.edu.cn

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Cao Zhi-Fang (曹芝芳), Lin Zhao-Jun (林兆军), Lü Yuan-Jie (吕元杰), Luan Chong-Biao (栾崇彪), Wang Zhan-Guo (王占国) Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 2013 Chin. Phys. B 22 047102

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Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors

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