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Chin. Phys. B, 2013, Vol. 22(4): 047102    DOI: 10.1088/1674-1056/22/4/047102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors

Cao Zhi-Fanga, Lin Zhao-Juna, Lü Yuan-Jiea, Luan Chong-Biaoa, Wang Zhan-Guob
a School of Physics, Shandong University, Jinan 250100, China;
b Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was found there is a significant difference between Schottky drain AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in two-dimensional electron gas (2DEG) electron mobility in the gate-drain channel. We attribute this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly.
Keywords:  AlGaN/AlN/GaN HFET      Schottky drain contact      AlGaN barrier layer strain      polarization Coulomb field scattering  
Received:  26 June 2012      Revised:  01 August 2012      Accepted manuscript online: 
PACS:  71.55.Eq (III-V semiconductors)  
  72.10.-d (Theory of electronic transport; scattering mechanisms)  
  73.61.Ey (III-V semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11174182) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110131110005).
Corresponding Authors:  Lin Zhao-Jun     E-mail:  linzj@sdu.edu.cn

Cite this article: 

Cao Zhi-Fang, Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao, Wang Zhan-Guo Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 2013 Chin. Phys. B 22 047102

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