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Chin. Phys. B, 2013, Vol. 22(4): 046103    DOI: 10.1088/1674-1056/22/4/046103
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Dual role of multiple-transistor charge sharing collection in single-event transient

Guo Yang, Chen Jian-Jun, He Yi-Bai, Liang Bin, Liu Bi-Wei
School of Computer Science, National University of Defense Technology, Changsha 410073, China
Abstract  As technologies scale down in size, that multiple-transistors are affected by a single ion becomes a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal-oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in two-transistor inverter chain, due to the charge sharing collection and the electrical interaction, the SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by ion's striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in three-transistor inverter in depth, and the study illustrates that three-transistor inverter is still the better replacer for spaceborne integrated circuits design in the advanced technologies.
Keywords:  multiple-transistor charge sharing collection      single event transient (SET)      pulse quenching effect      radiation hardened by design (RHBD)     
Received:  22 May 2012      Published:  01 March 2013
PACS:  61.80.Jh (Ion radiation effects)  
  85.30.Tv (Field effect devices)  
  85.30.Pq (Bipolar transistors)  
Fund: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61133007) and the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025).
Corresponding Authors:  Chen Jian-Jun     E-mail:  cjj192000@163.com

Cite this article: 

Guo Yang, Chen Jian-Jun, He Yi-Bai, Liang Bin, Liu Bi-Wei Dual role of multiple-transistor charge sharing collection in single-event transient 2013 Chin. Phys. B 22 046103

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