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Chin. Phys. B, 2013, Vol. 22(9): 096104    DOI: 10.1088/1674-1056/22/09/096104
Special Issue: TOPICAL REVIEW — Low-dimensional nanostructures and devices
TOPICAL REVIEW—Low-dimensional nanostructures and devices Prev   Next  

Topological insulator nanostructures and devices

Xiu Fa-Xian (修发贤), Zhao Tong-Tong (赵彤彤)
State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
Abstract  Topological insulators’ properties and their potential device applications are reviewed. We also explain why topological insulator (TI) nanostructures are an important avenue for research and discuss some methods by which TI nanostructures are produced and characterized. The rapid development of high-quality TI nanostructures provides an ideal platform to exploit salient physical phenomena that have been theoretically predicted but not yet experimentally realized.
Keywords:  topological insulators      nanostructures      quantum spin Hall effect      Aharonov-Bohm effect  
Received:  31 July 2013      Accepted manuscript online: 
PACS:  61.46.-w (Structure of nanoscale materials)  
  62.25.-g (Mechanical properties of nanoscale systems)  
  64.70.kg (Semiconductors)  
Corresponding Authors:  Xiu Fa-Xian     E-mail:  faxian@fudan.edu.cn

Cite this article: 

Xiu Fa-Xian (修发贤), Zhao Tong-Tong (赵彤彤) Topological insulator nanostructures and devices 2013 Chin. Phys. B 22 096104

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