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Chin. Phys. B, 2012, Vol. 21(9): 094208    DOI: 10.1088/1674-1056/21/9/094208
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

Dual-wavelength distributed Bragg reflector semiconductor laser based on composite resonant cavity

Chen Cheng (陈琤)a b, Zhao Ling-Juan (赵玲娟)a, Qiu Ji-Fang (邱吉芳)a, Liu Yang (刘扬)a, Wang Wei (王圩)a, Lou Cai-Yun (娄采云)b
a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b State Key Laboratory of Integrated Optoelectronics, Department of Electronics Engineering, Tsinghua University, Beijing 100084, China
Abstract  We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.
Keywords:  dual-wavelength laser      distributed Bragg reflector      quantum well intermixing  
Received:  27 December 2011      Revised:  06 February 2012      Accepted manuscript online: 
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  42.60.Da (Resonators, cavities, amplifiers, arrays, and rings)  
  42.65.Pc (Optical bistability, multistability, and switching, including local field effects)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60736036 and 61021003) and the National Basic Research Program of China (Grant No. 2011CB301702).
Corresponding Authors:  Chen Cheng     E-mail:  chchen@semi.ac.cn

Cite this article: 

Chen Cheng (陈琤), Zhao Ling-Juan (赵玲娟), Qiu Ji-Fang (邱吉芳), Liu Yang (刘扬), Wang Wei (王圩), Lou Cai-Yun (娄采云) Dual-wavelength distributed Bragg reflector semiconductor laser based on composite resonant cavity 2012 Chin. Phys. B 21 094208

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