The influence of annealing temperature on the morphology of graphene islands

doi:10.1088/1674-1056/21/8/088102

Abstract We report on temperature-programmed growth of graphene islands on Ru (0001) at annealing temperatures of 700 ℃, 800 ℃, and 900 ℃. The sizes of the islands each show a nonlinear increase with the annealing temperature. In 700 ℃ and 800 ℃ annealings, the islands have nearly the same sizes and their ascending edges are embedded in the upper steps of the ruthenium substrate, which is in accordance with the etching growth mode. In 900 ℃ annealing, the islands are much larger and of lower quality, which represents the early stage of Smoluchowski ripening. A longer time annealing at 900 ℃ brings the islands to final equilibrium with an ordered moiré pattern. Our work provides new details about graphene early growth stages that could facilitate the better control of such a growth to obtain graphene with ideal size and high quality.

Keywords: graphene islands Ru (0001) annealing temperature scanning tunneling microscope

Received: 21 March 2012
Revised: 17 April 2012
Accepted manuscript online:

PACS:	81.05.ue	(Graphene)
	87.64.Dz	(Scanning tunneling and atomic force microscopy)
	81.10.Pq	(Growth in vacuum)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CB932700, 2010CB923004, 2010CB923004, and 2009CB929103), the National Natural Science Foundation of China (Grant Nos. 10834011 and 60976089), and the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W22).

Corresponding Authors: Gao Hong-Jun
E-mail: hjgao@aphy.iphy.ac.cn

Cite this article:

Huang Li (黄立), Xu Wen-Yan (徐文焱), Que Yan-De (阙炎德), Pan Yi (潘毅), Gao Min (高敏), Pan Li-Da (潘理达), Guo Hai-Ming (郭海明), Wang Ye-Liang (王业亮), Du Shi-Xuan (杜世萱), Gao Hong-Jun (高鸿钧 ) The influence of annealing temperature on the morphology of graphene islands 2012 Chin. Phys. B 21 088102

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The influence of annealing temperature on the morphology of graphene islands

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