Influence of Boron doping on microcrystalline silicon growth

doi:10.1088/1674-1056/20/9/096801

Abstract Microcrystalline silicon (μc-Si:H) thin films with and without boron doping are deposited using the radio-frequency plasma-enhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponent β and the roughness exponent α are about 0.369 and 0.95 for the undoped thin film, respectively. Whereas, for the boron-doped μc-Si:H thin film, β increases to 0.534 and $\alpha$ decreases to 0.46 due to the shadowing effect.

Keywords: microcrystalline silicon thin film surface roughness shadowing effect

Received: 28 December 2010
Revised: 18 May 2011
Accepted manuscript online:

PACS:	68.55.ag	(Semiconductors)
	68.55.jm	(Texture)
	68.37.Ps	(Atomic force microscopy (AFM))

Fund: Project supported by the National Key Basic Research Program of China (Grant No. 2011CB201606) and the National Natural Science Foundation of China (Grant No. 51007082).

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Li Xin-Li(李新利), Chen Yong-Sheng(陈永生), Yang Shi-E(杨仕娥), Gu Jin-Hua(谷锦华), Lu Jing-Xiao(卢景霄), Gao Xiao-Yong(郜小勇), Li Rui(李瑞), Jiao Yue-Chao(焦岳超), Gao Hai-Bo(高海波), and Wang Guo(王果) Influence of Boron doping on microcrystalline silicon growth 2011 Chin. Phys. B 20 096801

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Influence of Boron doping on microcrystalline silicon growth

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