Chin. Phys. B, 2011, Vol. 20(4): 048102    DOI: 10.1088/1674-1056/20/4/048102
 INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next

Effect of Mn-doping on the growth mechanism and electromagnetic properties of chrysanthemum-like ZnO nanowire clusters

Yan Jun-Feng(闫军锋)a)b),You Tian-Gui(游天桂)a), Zhang Zhi-Yong(张志勇)a)b), Tian Jiang-Xiao(田江晓)a),Yun Jiang-Ni(贠江妮)a)b),and Zhao Wu(赵武)a)b)
a School of Information Science and Technology, Northwest University, Xi'an 710069, China; b Key Laboratory of Optoelectronic Technology of Shaanxi Province, Northwest University, Xi'an 710069, China
Abstract  Chrysanthemum-like ZnO nanowire clusters with different Mn-doping concentrations are prepared by a hydrothermal process. The microstructure, morphology and electromagnetic properties are characterized by x-ray diffractometer high-resolution transmission electron microscopy (HRTEM), a field emission environment scanning electron microscope (FEESEM) and a microwave vector network analyser respectively. The experimental results indicate that the as-prepared products are Mn-doped ZnO single crystalline with a hexagonal wurtzite structure, that the growth habit changes due to Mn-doping and that a good magnetic loss property is found in the Mn-doped ZnO products, and the average magnetic loss tangent tan$\delta$m is up to 0.170099 for 3% Mn-doping, while the dielectric loss tangent tanδe is weakened, owing to the fact that ions Mn2+ enter the crystal lattice of ZnO.
Keywords:  chrysanthemum-like ZnO nanowire clusters      electromagnetic properties      hydrothermal method      Mn-doping
Received:  28 September 2010      Revised:  07 December 2010      Accepted manuscript online:
 PACS: 81.10.Dn (Growth from solutions) 81.07.Gf (Nanowires) 81.16.Dn (Self-assembly) 77.22.Gm (Dielectric loss and relaxation)
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60976069), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2010JM6008), and the Xi'an Scientific and Technological Project, China (Grant No. CXY1008).