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Chin. Phys. B, 2010, Vol. 19(7): 077502    DOI: 10.1088/1674-1056/19/7/077502

Influence of the distance between two voltage contacts on giant magneto-impedance of Co-based amorphous wires

Zhang Shu-Ling(张树玲), Xing Da-Wei(邢大伟), and Sun Jian-Fei(孙剑飞)
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
Abstract  The Co75 Fe4.2Si8B12Nb0.8 amorphous wires of 30 μ m in diameter are produced by melt extraction and annealing at 450 $^\circ$C for 20 min in vacuum with a longitudinal or transverse field of 40 kA/m. Distances between the two voltage contacts of 6, 5, 4 and 2 mm are obtained by moving the two voltage contacts towards the centre of the sample at the same time. Results indicate that magneto-impedance response is dependent on the distance significantly. As distance decreases from 6 to 2 mm,  $\Delta Z/Z$ reduces from 609% to 95% and giant magneto-impedance (GMI) profiles change from two-peak to single-peak. Besides, field sensitivity improves from 0.47%/(A/m) to 0.76%/(A/m) when the single-peak GMI just appears. It is therefore concluded that actual measurements can be made comparable only by taking into account the influence of distance between two voltage contacts for a magneto-impedance measurement.
Keywords:  GMI effect      amorphous wire      magnetic field anneal      domain structure  
Accepted manuscript online: 
PACS:  75.47.De (Giant magnetoresistance)  
  75.80.+q (Magnetomechanical effects, magnetostriction)  
  75.50.Kj (Amorphous and quasicrystalline magnetic materials)  
  81.20.-n (Methods of materials synthesis and materials processing)  
  81.40.Gh (Other heat and thermomechanical treatments)  

Cite this article: 

Zhang Shu-Ling(张树玲), Xing Da-Wei(邢大伟), and Sun Jian-Fei(孙剑飞) Influence of the distance between two voltage contacts on giant magneto-impedance of Co-based amorphous wires 2010 Chin. Phys. B 19 077502

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