Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

doi:10.1088/1674-1056/19/4/047205

Abstract This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide (Ta-doped ITO) films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $\sim 5.65\times 10^{ - 5}$~$\Omega \cdot$cm$^{2}$ and show the transmittance of $\sim $98% at a wavelength of 440~nm when annealed at 500~\du. Blue light emitting diodes (LEDs) fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21~V at an injection current of 20~mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20~mA in comparison with that of LEDs with conventional Ni/Au contacts.

Keywords: Ohmic contact specific contact resistance p--GaN tantalum-doped indium tin oxide (Ta-doped ITO)

Received: 25 July 2009
Revised: 29 August 2009
Published: 15 April 2010

PACS:	85.60.Jb	(Light-emitting devices)
	73.40.Cg	(Contact resistance, contact potential)
	61.72.uj	(III-V and II-VI semiconductors)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by Science and Technology Planning Project of Guangdong Province (Grant No.~2007A010501008), the Production and Research Project of Guangdong Province and the Ministry of Education (Grant No.~2009B090300338).

Cite this article:

Huang Jun-Yi, Fan Guang-Han, Zheng Shu-Wen, Niu Qiao-Li, Li Shu-Ti, Cao Jian-Xing, Su Jun, Zhang Yong Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes 2010 Chin. Phys. B 19 047205

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