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Chin. Phys. B, 2010, Vol. 19(4): 047205    DOI: 10.1088/1674-1056/19/4/047205
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

Huang Jun-Yi, Fan Guang-Han, Zheng Shu-Wen, Niu Qiao-Li, Li Shu-Ti, Cao Jian-Xing, Su Jun, Zhang Yong
Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
Abstract  This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide (Ta-doped ITO) films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $\sim 5.65\times 10^{ - 5}$~$\Omega \cdot$cm$^{2}$ and show the transmittance of $\sim $98% at a wavelength of 440~nm when annealed at 500~\du. Blue light emitting diodes (LEDs) fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21~V at an injection current of 20~mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20~mA in comparison with that of LEDs with conventional Ni/Au contacts.
Keywords:  Ohmic contact      specific contact resistance      p--GaN      tantalum-doped indium tin oxide (Ta-doped ITO)  
Received:  25 July 2009      Revised:  29 August 2009      Published:  15 April 2010
PACS:  85.60.Jb (Light-emitting devices)  
  73.40.Cg (Contact resistance, contact potential)  
  61.72.uj (III-V and II-VI semiconductors)  
  73.61.Ey (III-V semiconductors)  
Fund: Project supported by Science and Technology Planning Project of Guangdong Province (Grant No.~2007A010501008), the Production and Research Project of Guangdong Province and the Ministry of Education (Grant No.~2009B090300338).

Cite this article: 

Huang Jun-Yi, Fan Guang-Han, Zheng Shu-Wen, Niu Qiao-Li, Li Shu-Ti, Cao Jian-Xing, Su Jun, Zhang Yong Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes 2010 Chin. Phys. B 19 047205

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