Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties

doi:10.1088/1674-1056/19/10/107304

Abstract This paper stuides the structures of 4H–SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 m$\Omega$·cm² when the Baliga figure of merit value of 13.1 GW/cm² is achieved.

Keywords: 4H–SiC floating junction Schottky barrier diode optimization

Received: 16 July 2009
Revised: 05 April 2010
Accepted manuscript online:

PACS:	61.72.S-	(Impurities in crystals)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	73.40.-c	(Electronic transport in interface structures)
	73.61.Le	(Other inorganic semiconductors)
	85.30.Kk	(Junction diodes)

Fund: Project supported by the Open Fund of Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education of China.

Cite this article:

Nan Ya-Gong(南雅公), Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), and Ren Jie(任杰) Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties 2010 Chin. Phys. B 19 107304

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Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties

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