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Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs |
| Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo |
| Key Laboratory for Wide Bandgap Semiconductor Devices, Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract Based on the exact resultant solution of two-dimensional Poisson's equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor (CMOS)-based device in a nanoscale regime.
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Received: 18 January 2010
Revised: 11 May 2010
Published: 15 October 2010
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PACS:
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71.20.Mq
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(Elemental semiconductors)
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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73.40.-c
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(Electronic transport in interface structures)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 200807010010). |
Cite this article:
Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs 2010 Chin. Phys. B 19 107302
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