Micro thermal shear stress sensor based on vacuum anodic bonding and bulk-micromachining
Yi Liang(易亮)a)b), Ou Yi(欧毅)a)†, Shi Sha-Li(石莎莉)a)‡, Ma Jin(马瑾)b), Chen Da-Peng(陈大鹏)a), and Ye Tian-Chun(叶甜春)a)
a Silicon Device & Integrated Technology Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China; c School of Physics & Microelectronics, Shandong University, Jinan 250100, China
Abstract This paper describes a micro thermal shear stress sensor with a cavity underneath, based on vacuum anodic bonding and bulk micromachined technology. A Ti/Pt alloy strip, 2$\mu $m$\times $100$\mu $m, is deposited on the top of a thin silicon nitride diaphragm and functioned as the thermal sensor element. By using vacuum anodic bonding and bulk-si anisotropic wet etching process instead of the sacrificial-layer technique, a cavity, functioned as the adiabatic vacuum chamber, 200$\mu $m$\times $200$\mu $m$^{ }\times $400$\mu $m, is placed between the silicon nitride diaphragm and glass (Corning 7740). This method totally avoid adhesion problem which is a major issue of the sacrificial-layer technique.
Received: 08 September 2007
Revised: 17 October 2007
Accepted manuscript online:
PACS:
85.85.+j
(Micro- and nano-electromechanical systems (MEMS/NEMS) and devices)
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 60576053) and
Technology Innovation of Chinese
Academy of Sciences (Grant No CXJJ-176).
Cite this article:
Yi Liang(易亮), Ou Yi(欧毅), Shi Sha-Li(石莎莉), Ma Jin(马瑾), Chen Da-Peng(陈大鹏), and Ye Tian-Chun(叶甜春) Micro thermal shear stress sensor based on vacuum anodic bonding and bulk-micromachining 2008 Chin. Phys. B 17 2130
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