Abstract In0.3Ga0.7N metal--insulator--semiconductor (MIS) and metal--semiconductor (MS) surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The photoresponse and reverse current--voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.
Received: 18 October 2006
Revised: 24 November 2006
Accepted manuscript online:
PACS:
85.60.Gz
(Photodetectors (including infrared and CCD detectors))
(Surface barrier, boundary, and point contact devices)
Fund: Project supported by the State Key Development Program
for Basic Research of China (Grant No~2006CB6049), the National
Natural Science Foundation of China (Grant No~60476030), and the Natural Science
Foundation of Jiangsu Province of China (Grant No~BK2
Cite this article:
Zhou Jian-Jun(周建军), Wen Bo(文博), Jiang Ruo-Lian(江若琏), Liu Cheng-Xiang(刘成祥), Ji Xiao-Li(姬小利), Xie Zi-Li(谢自力), Chen Dun-Jun(陈敦军), Han Ping(韩平), Zhang Rong(张荣), and Zheng You-Dou(郑有炓) Photoresponse of the In0.3Ga0.7 N metal--insulator--semiconductor photodetectors 2007 Chinese Physics 16 2120
A self-powered and sensitive terahertz photodetection based on PdSe2 Jie Zhou(周洁), Xueyan Wang(王雪妍), Zhiqingzi Chen(陈支庆子), Libo Zhang(张力波), Chenyu Yao(姚晨禹), Weijie Du(杜伟杰), Jiazhen Zhang(张家振), Huaizhong Xing(邢怀中), Nanxin Fu(付南新), Gang Chen(陈刚), and Lin Wang(王林). Chin. Phys. B, 2022, 31(5): 050701.
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