Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET
Tong Jian-Nong (童建农)a, Zou Xue-Cheng (邹雪城)ab, Shen Xu-Bang (沈绪榜)a
a Centre for IC Design, Institute of Pattern Recognition and Artificial Intelligence, Huazhong University of Science and Technology, Wuhan 430074, China; b Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
Abstract This paper presents the influences of structural parameters on the immunity of short-channel effects in grooved-gate n-channel metal－oxide－semiconductor field effect transistor (nMOSFET) using the simulator PISCES-II. The zero or negative groove-junction depth is beneficial to the improvement of the threshold characters, but there exists a limited range. The doping concentration of both substrate and channel has a significant influence on the threshold characters as well as on the device transconductance. Thus, the variation in these adjustable parameters may help to optimize the device design.
Received: 15 March 2004
Revised: 25 June 2004
Accepted manuscript online:
(Impurity doping, diffusion and ion implantation technology)
Cite this article:
Tong Jian-Nong (童建农), Zou Xue-Cheng (邹雪城), Shen Xu-Bang (沈绪榜) Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET 2004 Chinese Physics 13 1815
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