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Chin. Phys., 2003, Vol. 12(1): 75-78    DOI: 10.1088/1009-1963/12/1/013
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Nanocrystalline silicon films prepared by laser-induced crystallization

Peng Ying-Caia, Fu Guang-Shengb, Yu Weib, Li She-Qiangb, Hou Hai-Hongb, Han Lib
a College of Electronic and Informational Engineering, Hebei University, Baoding, 071002, China; b College of Physics Science and Technology, Hebei University, Baoding 071002, China
Abstract  The excimer laser-induced crystallization technique has been used to investigate the preparation of nanocrystalline silicon (nc-Si) from amorphous silicon ($\al$-Si) thin films on silicon or glass substrates. The $\al$-Si films without hydrogen grown by pulsed-laser deposition are chosen as precursor to avoid the problem of hydrogen effluence during annealing. Analyses have been performed by scanning electron microscopy, atomic force microscopy, Raman scattering spectroscopy and high-resolution transmission--electron microscopy. Experimental results show that silicon nanocrystals can be formed through laser annealing. The growth characters of nc-Si are strongly dependent on the laser energy density. It is shown that the volume of the molten silicon predominates essentially the grain size of nc-Si, and the surface tension of the crystallized silicon is responsible for the mechanism of nc-Si growth.
Keywords:  laser annealing      crystallization      nanocrystalline silicon  
Received:  21 June 2002      Revised:  12 September 2002      Published:  20 January 2003
PACS:  81.07.Bc (Nanocrystalline materials)  
  81.05.Cy (Elemental semiconductors)  
  61.82.Fk (Semiconductors)  
  68.37.Ps (Atomic force microscopy (AFM))  
  68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM))  
  68.37.Lp (Transmission electron microscopy (TEM))  
  78.30.Am (Elemental semiconductors and insulators)  
  78.66.Db (Elemental semiconductors and insulators)  
Fund: Project supported by the Natural Science Foundation of Hebei Province, China (Grant No 500084).

Cite this article: 

Fu Guang-Sheng, Yu Wei, Li She-Qiang, Hou Hai-Hong, Peng Ying-Cai, Han Li Nanocrystalline silicon films prepared by laser-induced crystallization 2003 Chin. Phys. 12 75

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