Abstract The occupation functions for the general condition f(E,T), for the high field approx-imation (HTSC) fH(E,T) and for the steady state photoconductivity (SSPC) fP(E,T) in the thermally stimulated conductivity (TSC) of amorphous semiconductors have been inves-tigated. It was found that the occupation function f(E,T) in TSC is in excellent agreement with the occupation function in SSPC fP(E,T) under the condition of $\sigma$TSC(T) = $\sigma$P(T).There is a large difference between fP(E,T) and fH(E,T), which can be much reduced by introducing an effective attempt to escape frequency νeff in the calculation of fH (E, T). The results show that the mobility-lifetime product ($\mu$$\tau$) in TSC obtained from SSPC measure-ments under the above condition is valid. For high field approximation TSC, the simulated νeff is found to be temperature dependent.
Received: 13 July 1993
Accepted manuscript online:
PACS:
66.70.-f
(Nonelectronic thermal conduction and heat-pulse propagation in solids;thermal waves)
(Low-field transport and mobility; piezoresistance)
Fund: Project supported by the National Natural Science Foundation of China.
Cite this article:
ZHU MEI-FANG (朱美芳), DING YI-BING (丁亦兵), ZONG JUN (宗军), LIU HONG (刘红) SIMULATION OF OCCUPATION FUNCTION FOR THERMALLY STIMULATED CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS 1994 Acta Physica Sinica (Overseas Edition) 3 200
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