Numerical results show that, for quantum autonomous chaotic system, the evolution of initially coherent states are sensitive to perturbation. The overlap of a perturbed state with the unperturbed one decays exponentially, which is followed by fluctuation around N^{-1}, N being the dimension of the Hilbert space. The matrix elements of the evolution operator in interaction picture tend to be a random distribution after sufficiently long time, where the interaction is the perturbation, even when the perturbation is very weak. The difference between a regular system and the chaotic one is shown clearly. In a regular system, the overlap shows strong revival. The distribution of the evolution matrix has only a few dominant terms.

The quantum nonlinear schr?dinger equation (QNSE) is exactly solved by Beth's ansatz method and we give a reasonable definition of the quantum soliton states. From the definition we construct the soliton states of the QNSE from its bound-state solutions. The dispersion effect of the quantum soliton is also exactly analysed.

Photoconductive properties of a polymer designed to be photorefractive are investigated. The polymer is composed of photoconducting PVK [poly(n-vinylcarbazole)], photosensitizing TNF (2, 4, 7-trinitro-9-fluorenone), and optically nonlinear DANS (4-N, N-dimethyl-4′-nitrostilbene). The electric-field dependence and λ dependence of its photoconductivity and photocarrier generation efficiency have been measured. And preliminary four-wave mixing experiments have been carried out.

Based on Lighthill's equation, the n-th order (n > 2) inhomogeneous wave equations are established by means of the perturbation method. The third-order nonlinear parameter C/A is defined as a new characteristic parameter in addition to the second-order one B/A, By using the Lagrange's parameter variation method, the third-order harmonic waves are obtained, in which the accumulation solution have a term proportional to the square of the distance, It is shown by analysis that all the solutions are valid only in the region where the accumulation terms are predominant.

CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES

The crystal and magnetic structures of Nd_{2}Fe_{14}Si_{3} at room temperature were refined by Rietveld analysis of neutron-powder-diffraction data. It was found that silicon atoms occupy preferentially both 18h and 18f of Th_{2}Zn_{17}-type structure with occupancies 0.36 and 0.14, respectively, The Fe-Fe bond-lengths computed with the refined crystallographic parameters have optimum values, as compared with those of Nd_{2}Fe_{17} compounds, which can explain well why the Curie temperature rises strongly when the unit cell volume reduces with the substitution of silicon for iron in Nd_{2}Fe_{17}.

We report here the structural phase transitions of the crystal (NH_{4})_{2}SnBr_{6} investigated by Raman scattering at temperatures ranging from 10K to room temperature. Two phase transitions occurring at 150 and ll0K are found. Based on the group theory, it is proposed that the crystal undergoes a second-order phase transition at 150 K, resulting from a ferro-distortion with symmetry Γ^{4+}. The change of structure is confirmed to be O^{5}_{h} to C^{5}_{4h}, which is assigned to the rotary of [SnBr_{6}]^{2-} ion groups around the axis of <001>. Furthermore the crystal undergoes an order-disorder phase transition at ll0K which is related with the reorientation of the ammonium ion group. It is noticed that the change of the vibrational modes at 77K does not show any phase transition.

A theoretical model for describing H_{2} dissociative chemisorption on Cu surfaces is proposed. The sticking probability S is calculated as a function of vibrational state, average kinetic energy and incident angle of hydrogen molecular beam. Within the theoretical frame of this model, the different contributions to S from H_{2}(v = 0) and H_{2}(v = 1) can be clearly distinguished. The calculated results indicate that vibrational energy significantly promotes the chemisorption of H_{2} on Cu surfaces in the region of low translational energy. The equations derived can be used to analyze the experimental data for both pure and seeded molecular beams.

The Si_{3}N_{4} thin films have been manufactured by electron cyclotron resonance plasma enhanced chemical vapour deposition technology on the KBr and (111) monocrystal Si sub-strates, The infrared optical properties of the Si_{3}N_{4} film have been studied by analysing its IR spectrum. The results show that the Si_{3}N_{4} film can be used as an antireflexion and an-tireflectiug film of Si surface, The H content of Si_{3}N_{4} thin film has been estimated from the infrared absorption area. It is obtained that the H content of the Si_{3}N_{4} film deposited on the KBr substrate is lower than that deposited on Si substrate, and it derceases with increasing deposition temperature. The Raman spectra of the Si_{3}N_{4} film deposited at 360℃ has also been measured.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

Structural phase transition of MnBi and MnBiAl films has been investigated in the tem-perature range of 30-400℃. The transition from low-temperature phase to high-temperature phase occurs in both the films, but the phase transitions appear at different temperatures. According to the measurement of Kerr rotation as a function of thermal annealing and the phase transition process, it is shown that the transition is irreversible for MnBi film and reversible for MnBiAl film under our experimental condition. For this reason, we speculate that the aluminum added in MnBi makes the bonding force of Mn atoms with their neighbors stronger, which may be the cause for the difference of the phase transition between MnBi and MnBiAl films.

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