In this paper the application of homotopy equivalence transformation (HET) of topological space sets to the topological classification of states and defects in ordered media is discussed. Firstly, an argument is pres-ented about the idea that for simplifying and even working out the classification and constructing homotopy class sets into groups, it is crucial to utilize the HET. As the theoretical basis for doing this we sum up the relevant results in homotopy theory into a theorem, called the "invariance theorem for HET". Secondly, in order to favor the utilization of this theorem, several propositions on homotopy equivalence between space sets are given. Finally, the absolute and relative topological dassification of states and defects is systemtically studied. The main results obtained are embodied in eight theorems.

Optical absorption, emission and excitation spectra, lifetimes of ^{4}S_{3/2} state and ^{4}F_{9/2} state from 10K to 500K, and Raman spectra were measured for Er^{3+} ions in fluoride glass. The radiative transition probabilities were calculated on the basis of Judd-Ofelt theory. The nonradiative transition probabilities and the quantum efficiencies were determined by calculating the difference between the measured lifetimes and the calculated radiative transition probabilities. The temperature dependence of nonradiative transition provavility was investigated using the Huang-Rhys theory of multiphonon relaxation , in which two kinds of phonons as well as the parameter s were taken into consideration. A fairly good agreement of the theoretical calculation with the experimental results has been obtained. The value of s is estimated and the effect of s is discussed.

In this paper, the dependence of the photoionization cross section σ_{2}, total ion number N_{i} and the FWHM of photoionization spectral line in resonant multiphoton ionization processes(RMPI) upon the parameter C of the laser transverse spatial distribution has been studied. Considering the effects of spatial coordinate on the resonant multiphoton absorption cross section σ_{1}, the limited dimension of the laser-molecular interaction volume and threshold of laser intensity for RMPI, we deduce the expression of σ_{2} vs the parameter C. We calculated the value of σ_{2} for (2+2)PI of benzene by numerical method, and com-pared the result with that obtained by Bruzzeste et al. In additon, we also present the total ion number of photoionization and the FWHM of photoionization spectral line as a function of the parameter C.

By using the perturhation theory and small-amplitude approximation with the self-induced Raman effect and the loss as well as gain of the fiber taken into account, the transmission properties of solitons in the nomal dispersion region near the zero-group-dispersion wavelength are analytically investigated in this paper. The result shows that not only the small-amplitude dark soliton but also the small-amplitude bright soliton may exist in the normal dispersion region near the zero-group-dispersion point. Their stabilities depend on the propagating direction and the region in which they are situated in the parameter-space. The conversion between bright and dark solitons may be realized by controlling the relative intensities of gain and loss along the fiber. This may be applied to the logic or arithmetic devices in the integrated optical circuit.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

The defects at the Si/SiO_{2} interface have been studied by the deep-level transient spectroscopy (DLTS) technique in p-type MOS structures with and without gold diffusion. The experimental results show that the interaction of gold and Si/SiO_{2} interface defect,H_{it}(0.494), results in the formation of a new interface de-fect, Au-H_{it}(0.445). Just like the interface defect, H_{it}(0.494), the new interface defect possesses a few interesting properties, for example, when the gate voltage applied across the MOS structure reduces the energy interval between Fermi-level and Si valence band of the Si surface to values smaller than the hole ionization Gibbs free energy of the defect, a sharp DLTS peak is still observable; and the hole apparent activation energy increases with the decrease of the Si surface potential barrier height. These properties can be successfully explained with the transition energy band model of the Si/SiO_{2} interface.

Aluminium films with various thickness between 700 nm and 1μm were deposited on Si (100) substrates, and 400 keV N_{2}^{+} ions with doses ranging from 4.3×10^{17} to 1.8×10^{18} N/cm^{2} were implanted into the alu-minium films on silicon, Rutherford Backscattering (RBS) and channeling, secondary ion mass spectroscopy (SIMS), Fourier transform infrared spectra (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM) and spreading resistance probes (SRP) were used to characterize the synthesized aluminium nitride. The experiments showed that when the implantation dose was higher than a critical dose N_{c}, a buried stoichiometric AlN layer with high resistance was formed, while no apparent AlN XRD peaks in the as-implanted samples were observed; however, there was a strong AlN(100) diffraction peak appearing after annealing at 500 ℃ for 1h. The computer program, Implantation of Reactive Ions into Silicon (IRIS), has been modified and used to simulate the formation of the buried AlN layer as N_{2}^{+} is implanted into aluminium. We find a good agreement between experimental measurements and IRIS simulation.

In this note, a new approach is adopted to the magnetism in metallic hydrogen, i.e., based on the Kim theory and Stoner model the electron-phonon interaction is introduced into the itinerant electron mag-netism theory. A calculation of spontaneous magnetization of metallic hydrogen at T=0 K shows that in spite of no change in the para- to ferro-magnetism value, r_{sc} of W-S radius r_{s}, the spontaneous magnetic moment of electron in ferromagnetic state, where r_{s}>>r_{sc}, is considerably reduced by lattice vibrations.

[an error occurred while processing this directive]