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    1999年, 第8卷, 第9期 刊出日期:1999-09-15 上一期    下一期
    GENERAL
    ANALYTIC SOLUTION FOR ONE-DIMENSIONAL QUANTUM OSCILLATOR WITH A VARIABLE FREQUENCY
    徐秀玮, 任廷琦, 柳盛典
    1999 (9):  641-645.  doi: 10.1088/1004-423X/8/9/001
    摘要 ( 0 )   PDF(194KB) ([an error occurred while processing this directive])  
    According to generalized linear quantum transformation theory, we give the exact expression of the evolution operator, wave function and expectation value of observable quantity for one-dimensional quantum oscillator with a variable frequency: ω(t)={\displaystyle\frac{ω01+βt}(ω0, β>0).
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    RELATIVISTIC SPHERES
    刘四明, 魏霁昆, 郝立昆
    1999 (9):  646-650.  doi: 10.1088/1004-423X/8/9/002
    摘要 ( 0 )   PDF(177KB) ([an error occurred while processing this directive])  
    By analyzing the Einstein's equations for the static sphere, we find that there exists a non-singular static configuration whose radius can approach its corresponding horizon size arbitrarily.
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    THE CONTROL ACTION OF THE PERIODIC PERTURBATION ON A HYPERCHAOTIC SYSTEM
    张晓辉, 沈柯
    1999 (9):  651-656.  doi: 10.1088/1004-423X/8/9/003
    摘要 ( 0 )   PDF(235KB) ([an error occurred while processing this directive])  
    This paper presents a four-dimensional nonlinear dynamical system. By the numerical simulation the hyperchaotic attractor, Lyapunov exponents and Lyapunov dimension are obtained, also it is confirmed that hyperchaos can be driven in the system described by the equation. The control action of the periodic perturbation on the autonomous hyperchaotic system is studied, and a control rule is obtained which indicates the relationship of the control action and the frequency characteristics after degeneration of the system. Finaly the circuit implementation of the dynamical system is given.
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    CLASSICAL AREAS OF PHENOMENOLOGY
    DISTANCE BETWEEN DENSITY OPERATORS IN MULTIPHOTON PROCESSES
    张敬涛, 陈朝阳, 徐至展
    1999 (9):  657-663.  doi: 10.1088/1004-423X/8/9/004
    摘要 ( 0 )   PDF(223KB) ([an error occurred while processing this directive])  
    In this paper we investigate the distance between density operators in multiphoton processes. We study the distances between the time-evolved states of the atom, of the field, and of the total system and their respective reference states, compare them with the atomic inversion as well as the purity of the field, disclose their corresponding relations in various multiphoton processes. The physical interpretations are given by using a fully quantized Bloch equation in the two-photon process.
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    THEORETICAL STUDY OF THE INTENSITY DEPENDENCE OF TOTAL EFFECTIVE TRAP DENSITY IN PHOTOREFRACTIVE CRYSTALS
    迟明军, 窦硕星, 叶佩弦
    1999 (9):  664-669.  doi: 10.1088/1004-423X/8/9/005
    摘要 ( 0 )   PDF(194KB) ([an error occurred while processing this directive])  
    Intensity dependence of the total effective trap density Neff is studied theoretically for the two-centre and the three-charge-state photorefractive crystals. The results show that Neff always increases with increasing intensity in three-charge-state crystals, whereas it has more complicated behaviors in two-centre crystals. When SDγT/STγD is small, Neff increases and tends to saturate with increasing intensity for both type-A and type-B two-centre crystals. When SDγT/STγD is large, Neff increases to a maximum and then decreases a little for type-A crystals and decreases greatly for type-B crystals. The different intensity dependences of Neff in the two types of crystals come from their different level structures.
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    CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES
    PREPARATION OF STRIPE-SHAPED DOMAIN STRUCTURE IN FERROELECTRIC LIQUID CRYSTAL AND THE FABRICATION OF SPATIAL LIGHT MODULATOR
    吕瑞波, 徐克璹, 张舒雁, 顾翔, 邢中菁, 邓慧华, 顾建华, 肖中党, 陆祖宏
    1999 (9):  670-681.  doi: 10.1088/1004-423X/8/9/006
    摘要 ( 0 )   PDF(324KB) ([an error occurred while processing this directive])  
    The stripe-shaped domain (SSD) structure was prepared in the initial ferroelectric liquid crystal (FLC) alignment without the application of an external electric field, which was realized by the aligning layer modification through the doping of tin tetra-2, 4-dimethyl phenoxy phthalocyanine (SnPc) into the rubbed polyimide films. Atomic force microscopy was used to investigate the alignment films and the corresponding aligning ability was evaluated through the pre-tilt angle measurement. The memory capability and the contrast ratio of thus aligned SSFLC cells have been enhanced and improved with the appearance of the SSD structure. The electrically controlled 64×64 FLC spatial light modulator was fabricated using the improved ligning method, which proves valuable for the practical device fabrication.
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    CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
    TWO-DIMENSIONAL HOT-ELECTRON TRANSPORT IN GaAs-AlGaAs HETEROJUNCTIONS
    翁明琪, 吴杭生
    1999 (9):  682-689.  doi: 10.1088/1004-423X/8/9/007
    摘要 ( 0 )   PDF(231KB) ([an error occurred while processing this directive])  
    The mobility of a two-dimensional electron gas in GaAs-AlGaAs heterojunction is re-computed through solving numerically the balance equation. The peculiarity of the present study lies in that a new expression for the distribution function and the renormalized phonon frequency are used in the computation. Compared with those reported by previous authors, our result shows better agreement with the experimental data.
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    A STUDY ON SYNTHESIS OF La1-x SrxCrO3 BY SOL-GEL AND THEIR ELECTRICAL PROPERTIES
    刘晓梅, 杨敏, 吕喆, 裴力, 刘江, 苏文辉
    1999 (9):  690-693.  doi: 10.1088/1004-423X/8/9/008
    摘要 ( 0 )   PDF(183KB) ([an error occurred while processing this directive])  
    La1-x SrxCrO3 nanoparticles were prepared by the sol-gel method. The sintering temperature of the samples could be decreased to about 400 K. The crystal structures of La1-x SrxCrO3 at room temperature are all of the othorhombic perovskite GdFeO3-type (x≤0.4). And the electrical conductivity increases with x, but when x>0.3 it decreases. The higher the sintering temperature, the better the electrical conductivity, because the grain size of the examples increases with increasing sintering temperature.
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    ELECTRONIC STRUCTURE OF THE ZnTe/CdSe(100) INTERFACES WITH ATOM INTERCHANGE
    杨仕娥, 贾瑜, 马丙现, 申三国, 范希庆
    1999 (9):  694-701.  doi: 10.1088/1004-423X/8/9/009
    摘要 ( 0 )   PDF(318KB) ([an error occurred while processing this directive])  
    By using the combination of the first-nearest neighbor tight-binding model sp3s* and Green function method in the frame of the scattering theory, we studied the electronic structure of ZnTe/CdSe(100) heterojunction with cation layers interchange across ZnSe-like or CdTe-like interface, and presented the interface band structures and wavevector-resolved interface layer densities of states. By comparing with the electronic states of ideal interfaces, we analyzed the nature and origins of all interface states, and discussed the influence of atom layers interchange on interface electronic structure.
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    PHASE SEPARATION AND JOSEPHSON-COUPLING ORIGIN FOR THE ANOMALOUS Hc2 BEHAVIOR IN OVERDOPED Bi2Sr2-xLaxCuO6+δ CRYSTALS
    杨万里, 闻海虎, 倪泳明, 赵忠贤
    1999 (9):  702-710.  doi: 10.1088/1004-423X/8/9/010
    摘要 ( 0 )   PDF(253KB) ([an error occurred while processing this directive])  
    Hole-overdoped Bi2Sr2-xLaxCuO6+δ single crystals with two coexistent superconducting transitions have been intensively studied by measuring the dc magnetic susceptibility. It is found that the coexistence of these two phases cannot be attributed to any chemical or vortex dynamical effect but to some intrinsic driving force, such as the electronic-driven phase separation. Furthermore, the upper critical fields of the two phases behave in a rather different way; that is, one of them shows a "normal Hc2 behavior" which can be described by the critical fluctuation theory, while the other exhibits an "anomalous Hc2 behavior" and can be well explained by a recent theory based on an assumption of a Josephson-coupling origin, indicating a strong evidence of Josephson-coupling origin for the upward curvature of the so-called Hc2 in high Tc superconductors.
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