Direction-of-arrival estimation for co-located multiple-input multiple-output radar using structural sparsity Bayesian learning
Identifying the interactions in a colored dynamical network
Frequency-tunable transmon in a three-dimensional copper cavity
Monogamous nature of symmetric N-qubit states of the W class: Concurrence and negativity tangle
Effect of hydrostatic pressure and polaronic mass of the binding energy in a spherical quantum dot
Dynamical decoupling pulses on the quantum correlations for the system of superconducting quantum circuit
Entanglement dynamics of a three-qubit system with different interatomic distances
Thermal entanglement of the Ising–Heisenberg diamond chain with Dzyaloshinskii–Moriya interaction
Passive decoy-state quantum key distribution using weak coherent pulses with modulator attenuation
Efficient schemes of joint remote preparation with a passive receiver via EPR pairs
Optimized quantum random-walk search algorithm for multi-solution search
Stability of a delayed predator–prey model in a random environment
The stability of the first-order and second-order solution moments for a Harrison-type predator-prey model with parametric Gaussian white noise is analyzed in this paper. The moment equations of the system solution are obtained under Itô interpretations. The delay-independent stable condition of the first-order moment is identical to that of the deterministic delayed system, and the delay-independent stable condition of the second-order moment depends on the noise intensities. The corresponding critical time delays are determined once the stabilities of moments lose. Further, when the time delays are greater than the critical time delays, the system solution becomes unstable with the increase of noise intensities. Finally, some numerical simulations are given to verify the theoretical results.
Achieving high bit rate logical stochastic resonance in a bistable system by adjusting parameters
Chaotic synchronization in Bose–Einstein condensate of moving optical lattices via linear coupling
Full-order sliding mode control of uncertain chaos in a permanent magnet synchronous motor based on a fuzzy extended state observer
Chaotic maps and biometrics-based anonymous three-party authenticated key exchange protocol without using passwords
Performance characteristics of low-dissipative generalized Carnot cycles with external leakage losses
Composite behaviors of dual meminductor circuits
This paper focuses on analyzing the composite dynamic behaviors of two meminductors in serial and parallel connections with different polarities. Based on the constitutive relations, two time-integral-of-flux (TIF) controlled meminductors are adopted to theoretically demonstrate the variation of memductance in terms of TIF, charge, flux, and current. By utilizing a floating memristor-less meminductor emulator, the theoretical analysis reported in this paper is confirmed via a PSPICE simulation study and hardware experiment. Good agreement among theoretical analysis, simulation, and hardware validation confirms that dual meminductor circuits in composite connections behave as a new meminductor with higher complexity.
In situ electrical transport measurement of superconductive ultrathin films
First-principles study of FeSe epitaxial films on SrTiO3
The discovery of high temperature superconductivity in FeSe films on SrTiO3 substrate has inspired great experimental and theoretical interests. First-principles density functional theory calculations, which have played an important role in the study of bulk iron-based superconductors, also participate in the investigation of interfacial superconductivity. In this article, we review the calculation results on the electronic and magnetic structures of FeSe epitaxial films, emphasizing on the interplay between different degrees of freedom, such as charge, spin, and lattice vibrations. Furthermore, the comparison between FeSe monolayer and bilayer films on SrTiO3 is discussed.
Direct evidence of high temperature superconductivity in one-unit-cell FeSe films on SrTiO3 substrate by transport and magnetization measurements
What makes the Tc of FeSe/SrTiO3 so high?
This paper reviews some of the recent progresses in the study of high temperature superconductivity in the interface between a single unit cell FeSe and SrTiO3. It offers the author’s personal view of why Tc is high and how to further increase it.
In-situ spectroscopic studies and interfacial engineering on FeSe/oxide heterostructures: Insights on the interfacial superconductivity
Stark-potential evaporative cooling of polar molecules in a novel optical-access opened electrostatic trap
Field ionization process of Eu 4f76snp Rydberg states
The field ionization process of the Eu 4f76snp Rydberg states, converging to the first ionization limit, 4f76s 9S4, is systematically investigated. The spectra of the Eu 4f76snp Rydberg states are populated with three-step laser excitation, and detected by electric field ionization (EFI) method. Two different kinds of the EFI pulses are applied after laser excitation to observe the possible impacts on the EFI process. The exact EFI ionization thresholds for the 4f76snp Rydberg states can be determined by observing the corresponding EFI spectra. In particular, some structures above the EFI threshold are found in the EFI spectra, which may be interpreted as the effect from black body radiation (BBR). Finally, the scaling law of the EFI threshold for the Eu 4f76snp Rydberg states with the effective quantum number is built.
Ionizations and fragmentations of benzene, methylbenzene, and chlorobenzene in strong IR and UV laser fields
Resonance enhanced electron impact excitation for P-like Cu XV
Vector correlations study of the reaction N(2D)+ H2(X1Σg+)→NH(a1Δ)+ H(2S) with different collision energies and reagent vibration excitations
Kinetics of protein adsorption/desorption mediated by pH-responsive polymer layer
Photostop of iodine atoms from electrically oriented ICl molecules
Determination of ion quantity by using low-temperature ion density theory and molecular dynamics simulation
Rapid extraction of the phase shift of the cold-atom interferometer via phase demodulation
Temperature and number evolution of cold cesium atoms inside a wall-coated glass cell
Kramers-Kronig relation in a Doppler-broadened Λ -type three-level system
Defocusing role in femtosecond filamentation: Higher-order Kerr effect or plasma effect?
Deflections of photoelectron classical trajectories in screened Coulomb potentials of H2+
Enhancement of photoacoustic tomography in the tissue with speed-of-sound variance using ultrasound computed tomography
Dynamics of quantum Fisher information in a two-level system coupled to multiple bosonic reservoirs
Sub-Poissonian photon emission in coupled double quantum dots–cavity system
Fabrication of 16 W all-normal-dispersion mode-locked Yb-doped rod-type fiber laser with large-mode area
Quantitative measurements of one-dimensional OH absolute concentration profiles in a methane/air flat flame by bi-directional laser-induced fluorescence
Role of the aperture in Z-scan experiments: A parametric study
Simultaneous reconstruction of temperature distribution and radiative properties in participating media using a hybrid LSQR–PSO algorithm
Discontinuity of mode transition and hysteresis in hydrogen inductively coupled plasma via a fluid model
Au nanorods-incorporated plasmonic-enhanced inverted organic solar cells
Production of intense attosecond vector beam pulse trains based on harmonics
Simulations of the L–H transition dynamics with different heat and particle sources
Structural origin underlying the effect of cooling rate on solidification point
Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction
Electron irradiation-induced change of structure and damage mechanisms in multi-walled carbon nanotubes
Relationship between bias voltage and microstructureas well as properties of CrAlYN films
Mechanical, electronic, and thermodynamic properties of zirconium carbide from first-principles calculations
Nature of the band gap of halide perovskites ABX3 (A= CH3NH3, Cs; B= Sn, Pb; X= Cl, Br, I): First-principles calculations
Carrier behavior of HgTe under high pressure revealed by Hall effect measurement
Theoretical analysis of droplet transition from Cassie to Wenzel state
Residual occurrence and energy property of proteins in HNP model
Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer
Phase diagram of the Fermi–Hubbard model with spin-dependent external potentials: A DMRG study
Effects of IIIB transition metals on optoelectronic and magnetic properties of HoMnO3: A first principles study
Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors
Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction
Adiabatic quantum pump in a zigzag graphene nanoribbon junction
Photoactive area modification in bulk heterojunctionorganic solar cells using optimization of electrochemicallysynthesized ZnO nanorods
Transport properties of zigzag graphene nanoribbons adsorbed with single iron atom
Surface states in crystals with low-index surfaces Hot!
For most of the conventional crystals with low-index surfaces, the hopping between the nearest neighbor (1NN) crystal planes (CPs) is dominant and the ones from the nNN (2≤q < ∞) CPs are relatively weak, considered as small perturbations. The recent theoretical analysis has demonstrated the absence of surface states at the level of the hopping approximation between the 1NN CPs when the original infinite crystal has the geometric reflection symmetry (GRS) for each CP. Meanwhile, based on the perturbation theory, it has also been shown that small perturbations from the hopping between the nNN (2≤n<∞) CPs and surface relaxation have no impact on the above conclusion. However, for the crystals with strong intrinsic spin-orbit coupling (SOC), the dominant terms of intrinsic SOC associate with two 1NN bond hoppings. Thus SOC will significantly contribute the hoppings from the 1NN and/or 2NN CPs except the ones within each CP. Here, we will study the effect of the hopping between the 2NN CPs on the surface states in model crystals with three different type structures (Type I: “…-P-P-P-P-…”, Type II: “…-P-Q-P-Q-” and Type III: “…-P=Q-P=Q-…” where P and Q indicate CPs and the signs “-” and “=” mark the distance between the 1NN CPs). In terms of analytical and numerical calculations, we study the behavior of surface states in three types after the symmetric/asymmetric hopping from the 2NN CPs is added. We analytically prove that the symmetric hopping from the 2NN CPs cannot induce surface states in Type I when each CP has only one electron mode. The numerical calculations also provide strong support for the conclusion, even up to 5NN. However, in general, the coupling from the 2NN CPs (symmetric and asymmetric) is favorable to generate surface states except Type I with single electron mode only.
Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry
Dynamic responses of series parallel-plate mesoscopic capacitors to time-dependent external voltage
Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface
Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors
Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process
AlGaN/GaN high electron mobility transistorwith Al2O3+BCB passivation
In this paper, Al2O3 ultrathin film used as the surface passivation layer for AlGaN/GaN high electron mobility transistor (HEMT) is deposited by thermal atomic layer deposition (ALD), thereby avoiding plasma-induced damage and erosion to the surface. A comparison is made between the surface passivation in this paper and the conventional plasma enhanced chemical vapor deposition (PECVD) SiN passivation. A remarkable reduction of the gate leakage current and a significant increase in small signal radio frequency (RF) performance are achieved after applying Al2O3+BCB passivation. For the Al2O3+BCB passivated device with a 0.7 μ gate, the value of fmax reaches up to 100 GHz, but it decreases to 40 GHz for SiN HEMT. The fmax/ft ratio (≥ 4) is also improved after Al2O3+BCB passivation. The capacitance-voltage (C-V) measurement demonstrates that Al2O3+BCB HEMT shows quite less density of trap states (on the order of magnitude of 1010 cm-2) than that obtained at commonly studied SiN HEMT.
Electronic properties of the SnSe-metal contacts: First-principles study
Structural, elastic, and electronic properties of recently discovered ternary silicide superconductor Li2IrSi3: An ab-initio study
Effective method to control the levitation force and levitation height in a superconducting maglev system
Electrochemical synthesis of alkali-intercalated iron selenide superconductors Hot!
Electrochemical method has been used to insert K/Na into FeSe lattice to prepare alkali-intercalated iron selenides at room temperature. Magnetization measurement reveals that KxFe2Se2 and NaxFe2Se2 are superconductive at 31 K and 46 K, respectively. This is the first successful report of obtaining metal-intercalated FeSe-based high-temperature superconductors using electrochemical method. It provides an effective route to synthesize metal-intercalated layered compounds for new superconductor exploration.
Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study
Electric properties and phase transition behavior in lead lanthanum zirconate stannate titanate ceramics with low zirconate content
Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications
Spectral investigation of R, Ce:YAG (R: Pr3+, Eu3+, Gd3+) single crystals and their applications in white LEDs
Design of broad angular phase retarders for the complete polarization analysis of extreme ultraviolet radiation
Characteristics of charge and discharge of PMMA samples due to electron irradiation
Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE
Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates
Tunable electromagnetically induced transparency at terahertz frequencies in coupled graphene metamaterial
Direct synthesis of graphene nanosheets support Pd nanodendrites for electrocatalytic formic acid oxidation
Crossover from 2-dimensional to 3-dimensional aggregations of clusters on square lattice substrates
Dynamics of two polarized nanoparticles Hot!
The intrinsic dynamics of two interacting electric polarized nanorods is theoretically investigated. The relative motion between them caused by electric dipole-dipole interaction is derived based on the generalized Lagrangian formulation. The results show that the relative translation and rotation are nonlinear and closely dependent on the initial configuration of the two nanorods. Furthermore, the general conditions of the initial configuration, which determine the two nanorods to repel or attract each other at the initial time, are obtained. The two-dimensional relative motion of the two nanorods shows that the antiparallel and head-to-tail ordering stable self-assembly are respectively formed in two planar initial configurations. For different three-dimensional initial configurations, the interesting dynamic relative attraction, repulsion, and oscillation with rotation are respectively realized. Finally, the theoretical schemes which realize the relaxing, direct head-to-tail ordering, and direct antiparallel ordering stable self-assembly are presented according to the different modes of the motion of the nanoparticles. Some of our results agree well with the results of experiments and simulations.
Spray forming and mechanical properties of a new type powder metallurgy superalloy
Hugoniot curve calculation of nitromethane decomposition mixtures: A reactive force field molecular dynamics approach
Driven self-assembly of hard nanoplates on soft elastic shells
Exponential flux-controlled memristor model and its floating emulator
Improved dichotomous search frequency offset estimator for burst-mode continuous phase modulation
Multi-mode coupling analysis of a sub-terahertz band planar corrugated Bragg reflector
Stability of magnetic tip/superconductor levitation systems
Excellent ethanol sensing properties based on Er2O3-Fe2O3 nanotubes
In this work, pure α-Fe2O3 and Er2O3-Fe2O3 nanotubes were synthesized by a simple single-capillary electrospinning technology followed by calcination treatment. The morphologies and crystal structures of the as-prepared samples were characterized by scanning electron microscopy and x-ray diffraction, respectively. The gas-sensing properties of the as-prepared samples have been researched, and the result shows that the Er2O3-Fe2O3 nanotubes exhibit much better sensitivity to ethanol. The response value of Er2O3-Fe2O3 nanotubes to 10 ppm ethanol is 21 at the operating temperature 240°, which is 14 times larger than that of pure α-Fe2O3 nanotubes (response value is 1.5). The ethanol sensing properties of α-Fe2O3 nanotubes are remarkably enhanced by doping Er, and the lowest detection limit of Er2O3-Fe2O3 nanotubes is 300 ppb, to which the response value is about 2. The response and recovery times are about 4 s and 70 s to 10 ppm ethanol, respectively. In addition, the Er2O3-Fe2O3 nanotubes possess good selectivity and long-term stability.
Decondensation behavior of DNA chains induced by multivalent cations at high salt concentrations: Molecular dynamics simulations and experiments
Effects of channel noise on synchronization transitions in delayed scale-free network of stochastic Hodgkin-Huxley neurons
In situ calibrating optical tweezers with sinusoidal-wave drag force method
Deductive way of reasoning about the internet AS level topology
Our current understanding about the AS level topology of the Internet is based on measurements and inductive-type models which set up rules describing the behavior (node and edge dynamics) of the individual ASes and generalize the consequences of these individual actions for the complete AS ecosystem using induction. In this paper we suggest a third, deductive approach in which we have premises for the whole AS system and the consequences of these premises are determined through deductive reasoning. We show that such a deductive approach can give complementary insights into the topological properties of the AS graph. While inductive models can mostly reflect high level statistics (e.g., degree distribution, clustering, diameter), deductive reasoning can identify omnipresent subgraphs and peering likelihood. We also propose a model, called YEAS, incorporating our deductive analytical findings that produces topologies contain both traditional and novel metrics for the AS level Internet.
Universal relation for transport in non-sparse complex networks
Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation