Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-
k metal gate NMOSFET with kMC TDDB simulations
徐昊, 杨红, 罗维春, 徐烨峰, 王艳蓉, 唐波, 王文武, 祁路伟, 李俊峰, 闫江, 朱慧珑, 赵超, 陈大鹏, 叶甜春
Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-
k metal gate NMOSFET with kMC TDDB simulations
Hao Xu(徐昊), Hong Yang(杨红), Wei-Chun Luo(罗维春), Ye-Feng Xu(徐烨峰), Yan-Rong Wang(王艳蓉), Bo Tang(唐波), Wen-Wu Wang(王文武), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Jiang Yan(闫江), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春)
中国物理B
.
2016, (8): 87305
-087305
.
DOI: 10.1088/1674-1056/25/8/087305