Chin. Phys. B
中国物理B  2020, Vol. 29 Issue (4): 047701    DOI: 10.1088/1674-1056/ab7224
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands
Zhen-Jie Tang(汤振杰), Rong Li(李荣), Xi-Wei Zhang(张希威)
1 School of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, China;
2 School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China
Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands
Zhen-Jie Tang(汤振杰)1, Rong Li(李荣)2, Xi-Wei Zhang(张希威)1
1 School of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, China;
2 School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China

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