Chin. Phys. B
中国物理B  2020, Vol. 29 Issue (4): 047305    DOI: 10.1088/1674-1056/ab7909
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
Wei-Fan Wang(王伟凡), Jian-Feng Wang(王建峰), Yu-Min Zhang(张育民), Teng-Kun Li(李腾坤), Rui Xiong(熊瑞), Ke Xu(徐科)
1 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China
Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
Wei-Fan Wang(王伟凡)1,2, Jian-Feng Wang(王建峰)1,2,3, Yu-Min Zhang(张育民)2,3, Teng-Kun Li(李腾坤)1,2, Rui Xiong(熊瑞)2, Ke Xu(徐科)1,2,3
1 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

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