Chin. Phys. B
中国物理B  2020, Vol. 29 Issue (3): 038502    DOI: 10.1088/1674-1056/ab6962
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane
Ying-Hui Zhong(钟英辉), Bo Yang(杨博), Ming-Ming Chang(常明铭), Peng Ding(丁芃), Liu-Hong Ma(马刘红), Meng-Ke Li(李梦珂), Zhi-Yong Duan(段智勇), Jie Yang(杨洁), Zhi Jin(金智), Zhi-Chao Wei(魏志超)
1 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 China Academy of Space Technology, Beijing 100086, China
Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane
Ying-Hui Zhong(钟英辉)1, Bo Yang(杨博)1, Ming-Ming Chang(常明铭)1, Peng Ding(丁芃)2, Liu-Hong Ma(马刘红)1, Meng-Ke Li(李梦珂)1, Zhi-Yong Duan(段智勇)1, Jie Yang(杨洁)1, Zhi Jin(金智)2,3, Zhi-Chao Wei(魏志超)3
1 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 China Academy of Space Technology, Beijing 100086, China

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