Chin. Phys. B
中国物理B  2020, Vol. 29 Issue (3): 037304    DOI: 10.1088/1674-1056/ab6c4c
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles
Ya-Lin Li(李亚林), Pei Gong(龚裴), Xiao-Yong Fang(房晓勇)
Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles
Ya-Lin Li(李亚林), Pei Gong(龚裴), Xiao-Yong Fang(房晓勇)
Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China

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