Chin. Phys. B
中国物理B  2020, Vol. 29 Issue (3): 037702    DOI: 10.1088/1674-1056/ab695e
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Surface passivation in n-type silicon and its application insilicon drift detector
Yiqing Wu(吴怡清), Ke Tao(陶科), Shuai Jiang(姜帅), Rui Jia(贾锐), Ye Huang(黄也)
1 School of Physical and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Surface passivation in n-type silicon and its application insilicon drift detector
Yiqing Wu(吴怡清)1,2, Ke Tao(陶科)2, Shuai Jiang(姜帅)2, Rui Jia(贾锐)2, Ye Huang(黄也)1
1 School of Physical and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

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